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Volumn 15, Issue 3, 2015, Pages 2104-2110

Role of interfacial oxide in high-efficiency graphene-silicon schottky barrier solar cells

Author keywords

graphene; native oxide; silicon; solar cell

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COATINGS; EFFICIENCY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SILICON; SOLAR CELLS;

EID: 84924544020     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl505011f     Document Type: Article
Times cited : (404)

References (33)
  • 29
    • 84924584440 scopus 로고
    • Photocurrent suppression and interface state recombination in MIS-Schottky barriers
    • Ng, K. K.; Card, H. C. Photocurrent suppression and interface state recombination in MIS-Schottky barriers IEEE Int. Electron Devices Meet. 1977, 57-61
    • (1977) IEEE Int. Electron Devices Meet. , pp. 57-61
    • Ng, K.K.1    Card, H.C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.