First-principles studies on substitutional doping by group IV and VI atoms in the two-dimensional arsenene

Applied Surface Science

Volumn 378, Issue , 2016, Pages 350-356

  Du, Juan ^a   Xia, Congxin ^a   Wang, Tianxing ^a   Zhao, Xu ^a   Tan, Xiaoming ^b   Wei, Shuyi ^a  

^a HENAN NORMAL UNIVERSITY   (China)

^b LUDONG UNIVERSITY   (China)

Author keywords

Arsenene; Electronic structures; First principle methods

Indexed keywords

ATOMS; ELECTRONIC STRUCTURE; IMPURITIES; MAGNETIC MOMENTS;

ARSENENE; ELECTRONIC CHARACTERISTICS; FIRST PRINCIPLE METHOD; FIRST PRINCIPLES METHOD; FIRST-PRINCIPLES STUDY; IMPURITY STATE; SPIN-DOWN STATE; TRANSITION LEVEL;

CRYSTAL ATOMIC STRUCTURE;

EID: 84962921670     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2016.03.055     Document Type: Article

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