Electronic structures and magnetic properties in nonmetallic element substituted MoS2 monolayer

Computational Materials Science

Volumn 107, Issue , 2015, Pages 72-78

  Hu, Ai Ming ^a,b   Wang, Ling Ling ^a   Xiao, Wen Zhi ^b   Xiao, Gang ^b   Rong, Qing Yan ^b  

^a HUNAN UNIVERSITY   (China)

^b HUNAN INSTITUTE OF ENGINEERING   (China)

Author keywords

Electronic structure; Magnetic property; MoS2 monolayer

Indexed keywords

BROMINE COMPOUNDS; CALCULATIONS; CHLORINE COMPOUNDS; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; ENERGY GAP; LAYERED SEMICONDUCTORS; MAGNETIC MOMENTS; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; MONOLAYERS; SEMICONDUCTOR DOPING;

AB INITIO CALCULATIONS; DOUBLE EXCHANGE INTERACTIONS; FERROMAGNETIC ORDERINGS; HALF-METALLIC BEHAVIOR; LOCAL MAGNETIC MOMENTS; LOCAL STRUCTURE; LOCALIZED STATE; NON-METALLIC ELEMENTS;

FLUORINE COMPOUNDS;

EID: 84930936021     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.commatsci.2015.05.021     Document Type: Article

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