Strain-induced metal-semiconductor transition in monolayers and bilayers of gray arsenic: A computational study

Physical Review B - Condensed Matter and Materials Physics

Volumn 91, Issue 16, 2015, Pages

  Zhu, Zhen ^a   Guan, Jie ^a   Tománek, David ^a  

^a MICHIGAN STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84929190364     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.91.161404     Document Type: Article

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