Electronic properties of monolayer and bilayer arsenene under in-plain biaxial strains

Superlattices and Microstructures

Volumn 86, Issue , 2015, Pages 501-507

  Cao, Huawei ^a   Yu, Zhongyuan ^a   Lu, Pengfei ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

Arsenene; Biaxial strain; Electronic properties; First principles

Indexed keywords

CONDUCTIVE MATERIALS; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ENERGY GAP; HONEYCOMB STRUCTURES; MONOLAYERS; OPTOELECTRONIC DEVICES; TENSILE STRAIN;

ARSENENE; BIAXIAL STRAINS; COMPRESSIVE STRAIN; FIRST PRINCIPLES; FIRST-PRINCIPLES DENSITY FUNCTIONAL THEORY; INTERLAYER DISTANCE; MECHANICAL AND ELECTRONIC PROPERTIES; TENSILE BIAXIAL STRAIN;

STRAIN;

EID: 84940652328     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2015.08.006     Document Type: Article

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