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Volumn 27, Issue 31, 2015, Pages 4640-4648

Chemical Vapor Deposition of Monolayer Rhenium Disulfide (ReS2)

(17) Keyshar, Kunttal a Gong, Yongji b Ye, Gonglan a Brunetto, Gustavo c Zhou, Wu d Cole, Daniel P e Hackenberg, Ken a He, Yongmin a Machado, Leonardo c Kabbani, Mohamad a Hart, Amelia H C a Li, Bo a Galvao, Douglas S c George, Antony a Vajtai, Robert a Tiwary, Chandra Sekhar a Ajayan, Pulickel M a

a Rice University (United States)

b RICE UNIVERSITY (United States)

c UNIVERSITY OF CAMPINAS (Brazil)

d OAK RIDGE NATIONAL LABORATORY (United States)

e U S ARMY RESEARCH LABORATORY (United States)

Author keywords

2D materials; chemical vapor deposition; renium disulfide; transition metal dichalcogenides

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; MONOLAYERS; RHENIUM COMPOUNDS; TEMPERATURE; TRANSITION METALS;

DIRECT SYNTHESIS; LOW TEMPERATURES; N-TYPE SEMICONDUCTORS; RENIUM DISULFIDE; TRANSITION METAL DICHALCOGENIDES;

SULFUR COMPOUNDS;

EID: 84939261596 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201501795 Document Type: Article

Times cited : (218)

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