Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene

Applied Physics Express

Volumn 8, Issue 5, 2015, Pages

  Zhang, Zhiya ^a   Xie, Jiafeng ^a   Yang, Dezheng ^a   Wang, Yuhua ^a   Si, Mingsu ^a   Xue, Desheng ^a  

^a LANZHOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ENGINEERING; PHYSICS;

ACOUSTIC PHONONS; BAND-GAP SEMICONDUCTORS; DEVICE APPLICATION; GAP VALUES; HIGH-DIRECTIONAL; LAYER STACKING; SEMI-CONDUCTING PROPERTY;

ENERGY GAP;

EID: 84929467768     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.7567/APEX.8.055201     Document Type: Article

References (32)

1. Y. Cui, Z. Zhong, D. Wang, W. U. Wang, and C. M. Lieber, Nano Lett. 3, 149 (2003).
2. K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, Science 306, 666 (2004).
3. L. Li, Y. Yu, G. J. Ye, Q. Ge, X. Ou, H. Wu, D. Feng, X. H. Chen, and Y. Zhang, Nat. Nanotechnol. 9, 372 (2014).
4. J. Qiao, X. Kong, Z.-X. Hu, F. Yang, and W. Ji, Nat. Commun. 5, 4475 (2014).
5. L. Liang, J. Wang, W. Lin, B. G. Sumpter, V. Meunier, and M. Pan, Nano Lett. 14, 6400 (2014).
6. J. C. Jamieson, Science 139, 1291 (1963).
7. J. Wittig and B. T. Matthias, Science 160, 994 (1968).
8. H. Liu, A. T. Neal, Z. Zhu, Z. Luo, X. Xu, D. Tomáek, and P. E. Ye, ACS Nano 8, 4033 (2014).
9. R. Fei, A. Faghaninia, R. Soklaski, J.-A. Yan, C. Lo, and L. Yang, Nano Lett. 14, 6393 (2014).
10. J.-W. Jiang and H. S. Park, Nat. Commun. 5, 4727 (2014).
11. R. Fei and L. Yang, Nano Lett. 14, 2884 (2014).
12. C. Kamal and M. Ezawa, arXiv:1410.5166v1.
13. J. Han, J. Xie, Z. Zhang, D. Yang, M. Si, and D. Xue, Appl. Phys. Express 8, 041801 (2015).
14. K. Takeda and K. Shiraishi, Phys. Rev. B 50, 14916 (1994).
15. S. Cahangirov, M. Topsakal, E. Aktürk, H. Sahin, and S. Ciraci, Phys. Rev. Lett. 102, 236804 (2009).
16. P. Vogt, P. D. Padova, C. Quaresima, J. Avila, E. Frantzeskakis, M. C. Asensio, A. Resta, B. Ealet, and G. L. Lay, Phys. Rev. Lett. 108, 155501 (2012).
17. A. Fleurence, R. Friedlein, T. Ozaki, H. Kawai, Y. Wang, and Y. Yamada- Takamura, Phys. Rev. Lett. 108, 245501 (2012).
18. J. H. Xu, E. G. Wang, C. S. Ting, and W. P. Su, Phys. Rev. B 48, 17271 (1993).
19. H. Krebs, W. Holz, and K. H. Worms, Chem. Ber. 90, 1031 (1957).
20. G. N. Greaves, S. R. Elliott, and E. A. Davis, Adv. Phys. 28, 49 (1979).
21. W. B. Pollard and J. D. Joannopoulos, Phys. Rev. B 19, 4217 (1979).
22. P. M. Smith, A. J. Leadbetter, and A. J. Apling, Philos. Mag. B 31, 57 (1975).
23. M. Dion, H. Rydberg, E. Schröder, D. C. Langreth, and B. I. Lundqvist, Phys. Rev. Lett. 92, 246401 (2004).
24. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996).
25. J. Heyd, G. E. Scuseria, and M. Ernzerhof, J. Chem. Phys. 118, 8207 (2003).
26. O. S. Cooper and A. W. Lawson, Phys. Rev. B 4, 3261 (1971).
27. J. Xie, Z. Y. Zhang, D. Z. Yang, D. S. Xue, and M. S. Si, J. Phys. Chem. Lett. 5, 4073 (2014).
28. J. Xie, M. S. Si, D. Z. Yang, Z. Y. Zhang, and D. S. Xue, J. Appl. Phys. 116, 073704 (2014).
29. K. Kaasbjerg, K. S. Thygesen, and A.-P. Jauho, Phys. Rev. B 87, 235312 (2013).
30. R. Fivaz and E. Mooser, Phys. Rev. 163, 743 (1967).
31. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, Nat. Nanotechnol. 6, 147 (2011).
32. K. Kaasbjerg, K. S. Thygesen, and K. W. Jacobsen, Phys. Rev. B 85, 115317 (2012).