Orientation and strain modulated electronic structures in puckered arsenene nanoribbons

AIP Advances

Volumn 5, Issue 6, 2015, Pages

  Zhang, Z Y ^a   Cao, H N ^b   Zhang, J C ^a   Wang, Y H ^a   Xue, D S ^a   Si, M S ^a  

^a LANZHOU UNIVERSITY   (China)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; GRAPHENE; NANORIBBONS; STRAIN;

ARMCHAIR STRUCTURE; COMPRESSIVE STRAIN; EFFECTIVE MASS; GAP ENERGY; INDIRECT BANDGAP SEMICONDUCTORS; NANO-STRUCTURING; OUT-OF PLANE; TWO-DIMENSIONAL MATERIALS;

TENSILE STRAIN;

EID: 84930965919     PISSN: None     EISSN: 21583226     Source Type: Journal    
DOI: 10.1063/1.4922329     Document Type: Article

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