Epitaxial Thin Film Crystalline Silicon Solar Cells on Low Cost Silicon Carriers

Thin Film Solar Cells Fabrication, Characterization and Applications

Volumn , Issue , 2006, Pages 1-38

  Poortmans, Jef ^a  

^a IMEC   (Belgium)

Author keywords

'wafer scale' approach; Epitaxial cell approach and deposition technology level; Epitaxial solar cell result and analysis; Epitaxial thin film crystalline silicon solar cells; Ion assisted deposition (IAD); Liquid phase epitaxy; Optical confinement; Stacked epitaxial reactor (SER)

Indexed keywords

CRYSTALLINE MATERIALS; ION BEAM ASSISTED DEPOSITION; LIQUID PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SILICON WAFERS; SOLAR CELLS; SPUTTERING; THIN FILM SOLAR CELLS; THIN FILMS;

DEPOSITION TECHNOLOGY; EPITAXIAL REACTORS; EPITAXIAL SOLAR CELLS; EPITAXIAL THIN FILMS; ION-ASSISTED DEPOSITION; OPTICAL CONFINEMENT; WAFER SCALE;

SILICON SOLAR CELLS;

EID: 84959158670     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/0470091282.ch1     Document Type: Chapter

References (100)

1. R. Brendel and D. Scholten, 'Modeling light trapping and electronic transport of waffle-shaped crystalline thin-film Si solar cells', Applied Physics A (Materials Science and Processing). vol.A69, no.2; p.201-213. (1999).
2. J. Palm, W. Krühler, W. Kusian, A. Lerchenberger, A. L. Endrös, G. Mihalik, B. Fickett and J. Tester, 'Characterization of Tri-crystalline Silicon for photovoltaic applications', Proceedings of the Twenty-eighth IEEE Photovoltaic Specialists Conference, Anchorage 15-22 September 2000, p.40-45 (2000).
3. B. H. Mackintosh, M. P. Ouellette, M. D. Rosenblum, J. P. Kalejs and B. P. Piwczyck, '100 micron thick multicrystalline Si wafers and cells from large diameter EFG cylinders', Proceedings of the Twenty-eighth IEEE Photovoltaic Specialists Conference, Anchorage 15-22 September 2000, p.46-49 (2000).
4. see e.g. A. V. Shah, J. Meier, E. Vallat-Sauvain, N. Wyrsch, U. Kroll, C. Droz, U. Graf, 'Material and solar cell research in microcrystalline silicon', Solar Energy materials and Solar Cells. vol.78; p.469-491(2003) and references therein.
5. R. B. Bergmann, 'Crystalline Si thin-film solar cells: a review', Applied Physics A (Materials-Science-Processing). vol.A69, no.2; p.187-194 (1999).
6. A. Focsa, A. Slaoui, E. Pihan, F. Snijkers, P. Leempoel, G. Beaucarne and J. Poortmans, 'Poly-Si films prepared by thermal CVD on flowable oxide layers coated ceramic substrates', E-MRS 2005 Spring Meeting, Strasbourg, May 31-June 3 (2005).
7. oc above 500 mV' and I. Gordon, K. Van Nieuwenhuysen, L. Carnel, D. Van Gestel, G. Beaucarne, 'Development of interdigitated solar cell and module processes for polycrystalline-silicon thin films', presented at the E-MRS 2005 Spring Meeting, Strasbourg, May 31-June 3 (2005) and to be published in Thin Solid Films.
8. C. Hebling, S. Reber, K. Schmidt, R. Lüdemann and F. Lutz, 'Oriented recrystallization of silicon layers for silicon thin-film solar cells', Conference Record of the Twenty-sixth IEEE Photovoltaic Specialists Conference - 1997 (Cat. No.97CB36026). IEEE, New York, NY, USA; 1997; 1451 p.623-626 (1997).
9. M. Pauli, T. Reindl, W. Krühler, F. Homberg and J.Müller, 'Anewfabrication method for multicrystalline silicon layers on graphite substrates suited for low-cost thin-film solar cells', Proceedings of the First World Conference on Photovoltaic Energy Conversion, Hawaii, p.1387-1390 (1994).
10. G. Andra, J. Bergmann, F. Falk and E. Ose, 'Laser-induced crystallization: a method for preparing silicon thin solar cells', Proceedings of the Twenty-sixth IEEE Photovoltaic Specialists Energy Conference, Anaheim, p.639-642, (1997).
11. M. J. Keevers, A. Turner, U. Schubert, P. A. Basore and M. A. Green, 'Remarkably effective hydrogenation of crystalline Si on glass modules', to be published in Proceedings of the Twentieth European Photovoltaic Solar Energy Conference, Barcelona, Spain, June 6-10 (2005).
12. M. Stemmer, G. Wagner, S. Martinuzzi, D. Ginley, A. Catalano, H. W. Schock, C. Eberspacher, T. M. Peterson and T. Wada, 'Silicon films deposited by LPE on low cost multicrystalline silicon substrates', Proceedings of Thin Films for Photovoltaic and Related Device Applications Symposium, p.123-128 (1996).
13. E. Demesmaeker, M. Caymax, R. Mertens, Le Quang Nam and M. Rodot, 'Solar cells in thin epitaxial layers on metallurgical silicon substrates', International Journal of Solar Energy, vol.11, no.1-2; p.37-53 (1992).
14. J. Poortmans, S. Reber, S. Gall, C. Zahedi and J. Alonso, 'European Cluster on High- and Intermediate thin-film crystalline Si solar cells R & D: overview of running projects and underlying roadmap', Proceedings of the Nineteenth European Photovoltaic Conference, Paris, 7-11 June, p.397-402 (2004).
15. There is one company dedicated to the production of solar grade Si (SGS, USA) whereas several other companies (Hemlock, USA; Wacker, Germany; Tokuyama, Japan) are developing specific production lines for the production of solar grade Si (Fluidized bed reactors for Wacker, vapor to liquid reactor for Tokuyama). Elkem, Norway is developing its own route based on upgrading metallurgical Si see e.g. C. Zahedi, E. Enebakk, K. Friestad, M. G. Dolmen, J. Heide, T. Buseth, R. Tronstad, C. Dethloff, K. Peter, R. Kopecek, I. Melnyk and P. Fath, 'Solar Grade Silicon from metallurgical route', Technical Digest of the Fourteenth International Photovoltaic Science and Engineering Conference (PVSEC-14), Bangkok, Thailand, January 26-February 1, p. 673-676, (2004).
16. H. A. Aulich, 'Silicon supply for PV', Technical Digest of theFourteenth International Photovoltaic Science and Engineering Conference (PVSEC-14), Bangkok, Thailand, January 26-February 1, p. 677, (2004).
17. T. Vermeulen, O. Evrard, W. Laureys, J. Poortmans, M. Caymax, J. Nijs and R. Mertens, 'Realisation of thin film solar cells in epitaxial layers grown on highly doped RGS-ribbons', Proceedings of the Thirteenth European Photovoltaic Solar Energy Conference, Nice, p.1501-1504 (1995).
18. G.Wagner, G. Steiner, B.Winter, W. Dorsch, A. Voigt, H. P. Strunk, R. Brendel, M.Wolf and J. H. Werner, 'Polycrystalline silicon layers on lowcost silicon ribbons for photovoltaic cell application', Proceedings of the Thirteenth European Photovoltaic Solar Energy Conference, Nice, p.461-464 (1995).
19. K. J.Weber, A. Stephens and A.W. Blakers, 'Investigation of the effect of various process parameters during liquid phase epitaxy of silicon on silicon substrates', Proceedings of the Thirteenth European Photovoltaic Solar Energy Conference, Nice, p. 1590-1593 (1995).
20. see e.g. T. Vermeulen, J. Poortmans, M. Caymax, F. Duerinckx, S. Maene, J. Szlufcik, J. Nijs, R. Mertens, N. B. Mason and T. M. Bruton, 'Application of industrial processing techniques to thin-film crystalline solar cells on highly doped defected silicon substrates', 'Proceedings of the SecondWorld Conference on PV Solar Energy Conversion', p.1209-1214 (1998) and J. Poortmans, J., F. Duerinckx, F, J. Nijs, J., N. Mason, N., T. Bruton, B. Garrard, B., T. Ulset and W. Warta, 'Large-area epitaxial thin-film solar cells on metallurgical-grade Si substrates'. Proceedings of the Sixteenth European Photovoltaic Solar Energy Conference and Exhibition; May 2000; Glasgow, Scotland, p. 1549-1552 (2000).
21. C. Zahedi, F. Ferrazza, A. Eyer, W. Warta, H. Riemann, n. V. Abrasimov, K. Peter and J. Hötzel, 'Thin-film silicon solar cells on low-cost metallurgical silicon substrates by liquid phase epitaxy', Proceedings of the Sixteenth European Photovoltaic Solar Energy Conference and Exhibition; May 2000; Glasgow, Scotland, p. 455-458 (2000).
22. J. Bloem and L. J. Giling, 'Mechanisms of the chemical vapour deposition of silicon', Current Topics in Materials Science (Ed. E. Kaldis), North-Holland Publishing Company (1985).
23. J. Poortmans, A. Diet, A., and A. Räuber, 'A. survey of the European activities and progress in the field of CVD-grown crystalline Si thin-films for solar cells on low-cost insulating substrates'. Proceedings of the Sixteenth European Photovoltaic Solar Energy Conference and Exhibition; May 2000; Glasgow, Scotland, p.1077-1082 (2000).
24. S. Arimoto, H. Morikawa, M. Deguchi, Y. Kawama, Y. Matsuno, T. Ishihara, H. Kumabe and T. Murotami, 'High-efficient operation of large-area 100 cm2 thin film polycrystalline silicon solar cell based on SOI structure', Solar Energy Materials and Solar Cells. vol.34; p.257-262 (1994).
25. A. Slaoui, R. Monna, D. Angermeier, S. Bourdais and J. C. Muller, 'Polycrystalline silicon films formation on foreign substrates by a rapid thermal CVD technique', Conference Record of the Twenty-sixth IEEE Photovoltaic Specialists Energy Conference, Anaheim, p. 627-630 (1997).
26. J. F. Gibbons, C. M. Gronet, K. E. Williams, 'Limited Reaction Processing: Silicon Epitaxy', Applied Physics Letters. Vol.47; p.721-723 (1985).
27. Z. C. Liang, H. Shen, N. S. Xu and S. Reber Characterisation of direct epitaxial silicon thin film solar cells on a low-cost substrate', Solar Energy Materials and Solar Cells, vol. 80, no.2; p. 181-193 (2003).
28. see e.g. M. Konuma, I. Silier, E. Czech and E. Bauser, 'Semiconductor liquid phase epitaxy for solar cell application', Solar Energy Materials and Solar Cells. vol.34, no.1-4; p.251-256, (1994).
29. T. F. Ciszek, T. H. Wang, X. Wu, R. W. Burrows, J. Alleman, C. R. Schwerdtfeger and T. Bekkedahl, 'Si thin layer growth from metal solutions on single-crystal and cast metallurgical-grade multicrystalline Si substrates', Conference Record of the Twenty-third IEEE Photovoltaic Specialists Conference, p.65-72, (1993) (Cat. No.93CH3283-9).
30. R. Bergmann, S. Robinson, Z. Shi and J. Kurianski, 'Silicon films incorporating a drift-field grown by liquid phase epitaxy for solar cell applications', Solar Energy Materials and Solar Cells, vol.31, no.3; p. 447-451 (1993).
31. M. Albrecht, B. Steiner, Th.Bergmann, A. Voigt, W. Dorsch, H. P. Strunk and G. Wagner, 'The crystalline quality of epitaxial Si layers solution grown on polycrystalline Si substrates', Materials Research Society Symposium Proceedings. vol.358; p.889-894 (1995).
32. B. Steiner and G. Wagner, 'Silicon layers on polycrystalline Si substrates - influence of growth parameters during liquid phase epitaxy', Journal of Crystal Growth. vol.146; p. 293-298 (1995).
33. S. Nishida, K. Nakagawa, M. Iwane, Y. Iwasaki, N. Ukiyo, H. Mizutani and T. Shoji, 'Si-film growth using liquid phase epitaxy method and its application to thin-film crystalline Si solar cell', Solar Energy Materials and Solar Cells, p. 525-532 (2001).
34. J. T. Moore, T. H.Wang, M. J. Heben, K. Douglas and T. F. Ciszek, 'Fused-salt electrodeposition of thin-layer silicon', Conference Record of the Twenty-sixth IEEE Photovoltaic Specialists Energy Conference, Anaheim, p. 775 (1997).
35. K. J.Weber, A. Cuevas and A.W. Blakers, 'The influence of drift fields in thin silicon solar cells', Solar Energy Materials and Solar Cells. vol.45; p.151-160 (1997).
36. D. Majumdar, S. Chattejee, U. Gangopadhyayand H. Saha, 'Role of drift field in thin silicon solar cell developed by liquid phase epitaxial method', SPIE - International Society For Optical Engineering, p. 1262-1265, (2000).
37. T. H. Wang, T. F. Ciszek, M. Page, Y. Yan, R. Bauer, Q. Wang, J. Casey, R. Reedy, R. Matson, R. Ahrenkiel and M. M. Al-Jassim, 'Material properties of polysilicon layers deposited by atmospheric pressure iodine vapor transport', Conference Record of the Twenty-eighth IEEE Photovoltaic Specialists Conference, Anchorage 15-22 September 2000, p.138-141 (2000) and T. H. Wang, T. F. Ciszek, M. R. Page, R. E. Bauer, Q.Wang and M. D. Landry, 'APIVT-grown silicon thin layers and PV devices', Conference Record of the Twenty-nineth IEEE Photovoltaic Specialists Conference, New Orleans, May, 19-24, 2002, p.94-97 (2002).
38. J. E. May, Jourrnal of the Electrochemical Society. vol.112; p.710 (1965).
39. L. Oberbeck, R. B. Bergmann, N. Jensen, S. Oeltingand J. H. Werner, 'Low-temperature silicon epitaxy by ion-assisted deposition', Diffusion Defect Data B, Solid State Phenomena, vol.67-68; p.459-464 (1999).
40. L. Oberbeck, T. A.Wagner, R. B. Bergmann, R.W. Collins, H. M. Branz, M. Stutzmann, S. Guha and H. Okamoto, 'Ion-assisted deposition of silicon epitaxial films with high deposition rate using low energy silicon ions', Amorphous and Heterogeneous Silicon Thin Films - 2000. Symposium (Materials Research Society Symposium Proceedings Vol.609), p. A7.1.1-6, (2001).
41. Niels-Peter Harder, Ph. D Thesis, University of Leipzig, 2005.
42. T. A.Wagner, L. Oberbeck, R. B. Bergmannand J. H.Werner, 'Intra-grain defects-limiting factor for low-temperature polycrystalline silicon films?', Diffusion Defect Data B, Solid State Phenomena. vol.80-81; p. 95-100 (2000).
43. T. A.Wagner and U. Rau, 'Density of recombination centers in epitaxial silicon thin-film solar cells by temperature-dependent quantum efficiency measurements', Applied Physics Letters. vol.82, no.16; p. 2637-2639 (2003).
44. L. Oberbeck, J. Schmidt, T. A. Wagner and R. B. Bergmann, 'High-rate deposition of epitaxial layers for efficient low-temperature thin film epitaxial silicon solar cells', Progress in Photovoltiacs Research And Applications. vol.9, no.5, p 333-340 (2001).
45. C. Rosenblad, M. Kummer, H.-R. Deller, T. Graf, A. Dommann, T. Hackbarth, G. Hock, E. Muller and H. von Kanel, Materials Research Society Symposium Proceedings. vol.696; p. 131 (2002).
46. S. Brehme, P. Kanschat, K. Lips, I. Sieber andW. Fuhs, Materials Science & Engineering B vol.B 69-70; p. 232 (2000).
47. T. Vermeulen, 'Epitaxial solar cells on low-cost, highly doped defected Si substrates' Ph.D thesis, Katholieke Universiteit Leuven.
48. T. Vermeulen, F. Duerinckx, K. De Clercq, J. Szlufcik, J. Poortmans, P. Laermans, M. Caymax, J. Nijs and R. Mertens, 'Cost-effective thin film solar cell processing on multicrystalline silicon', Conference Record of the Twenty-sixth IEEE Photovoltaic Specialists Conference - 1997 (Cat. No.97CB36026), p. 267-269 (1997).
49. K. Said, J. Poortmans, M. Libezny, M. Caymax, J. Nijs and R. Mertens, 'Low-temperature passivation for SiGe-alloy solar cells', Proceedings of the Fourteenth European Photovoltaic Solar Energy Conference, Barcelona, p.986, (1997).
50. J. H.Werner, S. Kolodinski and H. J. Queisser, 'Novel optimization principles and efficiency limits for semiconductor solar cells', Physical Review Letters. vol.72, no.24; p.3851-3854 (1994).
51. M.Wolf, R. Brendel, J. H.Werner and H. J. Queisser, 'Solar cell efficiency and carrier multiplication in Si1-xGex alloys', Journal of Applied Physics. vol.83; p.4213-4221 (1998).
52. K. Said, J. Poortmans, M. Caymax, R. Loo, A. Daami, G. Bremond, O. Kruger and M. Kittler, 'High quality, relaxed SiGe epitaxial layers for solar cell application'. Thin Solid Films. vol. 337, no.1-2; p. 85-89 (1999).
53. 1-x strained layers with interacting 60 and 90 degrees dislocations', Solid State Electronics. vol.36, no.3; ; p.331-337 (1993).
54. O. Kruger, W. Seifert, M. Kittler, A. Gutjahr, M. Konuma, K. Said and J. Poortmans, 'Electrical properties of SiGe epitaxial layers for photovoltaic application as studied by scanning electron microscopical methods', Diffusion and Defect Data Part B (Solid-State-Phenomena). vol.63-64; p.509-518 (1998).
55. K. Said, J. Poortmans, M. Caymax, J. F. Nijs, L. Debarge, E. Christoffel and A. Slaoui, 'Design, fabrication, and analysis of crystalline Si-SiGe heterostructure thin-film solar cells', IEEE Transactions on Electron Devices vol.46, no.10; p.2103-2110 (1999).
56. A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima and Y. Shiraki, 'Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure', Applied Physics Letters vol.83, no. 6, 1258-1260 (2003).
57. H. Presting, J. Konle and H. Kibbel, 'Self-assembled Ge-dots for Si solar cells', International Journal of Modern Physics B, vol.16, no.28-29; p. 4347-4351, (2003).
58. C. L. Andre, J. A. Carlin, J. J. Boeckl, D. M. Wilt, M. A. Smith, A. J. Pitera, M. L. Lee, E. A. Fitzgerald and S. A. Ringel, 'Investigations of high-performance GaAs solar cells grown on Ge-Si1-x/Gex-Si substrates', IEEE Transactions on Electron Devices. vol.52, no.6; p. 1055-1060 (2005).
59. G. Flamand, S. Degroote, K. Dessein and J. Poortmans, 'Cheap virtual germanium substrates by CSVT deposition on porous Si', Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, Orlando, January 2005 (2005).
60. J. Zettner, M. Thoenissen, T. Hierl, R. Brendel and M. Schulz, 'Novel porous silicon backside light reflector for thin silicon solar cells', Progress in Photovoltaics: Research and Applications. vol.6, no.6; 423-432 (1998).
61. L. Stalmans, J. Poortmans, M. Caymax, H. Bender, S. Jin, J. Nijs and R. Mertens, 'Realization of light confinement in thin crystalline Si films grown on porous silicon', Proceedings of the Second World Conference on Photovoltaic Solar Energy Conversion, Vienna, 1998, p. 124 (1998).
62. A. A. Abouelsaood, M.Y. Ghannam, L. Stalmans, J. Poortmans and J. F. Nijs, 'Experimental testing of a random medium optical model of porous silicon for photovoltaic applications', Progress in Photovoltaics: Research and Aplpications, p. 15-26 (2001).
63. R. Bilyalov, C.S. Solanki, J. Poortmans, O. Richard, H. Bender, M. Kummer and H. von Kanel, Solar Energy Materials and Solar Cells. vol.72; p. 221 (2002).
64. F. Duerinckx, K.Van Nieuwenhuysen, H. J. Kim, I.Kuzma-Filipek, G. Beaucarne and J. Poortmans, to be published in Proceedings of the Twentieth European Photovoltaic Solar Energy Conference, Barcelona, June 6-10, (2005).
65. S. Berger, S. Quoizola, A. Fave, A. Ouldabbes, A. Kaminski, S. Perichon, N. -E. Chabane-Sari, D. Barbier and A. Laugier, 'Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications', Crystal Research and Technology. vol.36, no.8-10; p.1005-1010 (2000).
66. Y. S. Tsuo, P. Menna, J. R. Pitts, K. R. Jantzen, S. E. Asher, M. M. Al-Jassim and T. F. Ciszek, 'Porous silicon gettering', Conference Record of the Twenty-fifth IEEE Photovoltaic Specialists Conference - 1996 (Cat. No.96CH35897), 461-464 (1996).
67. H. Raidt, R. Kohler, F. Banhart, B. Jenichen, A. Gutjahr, M. Konuma, I. Silier and E. Bauser, 'Adhesion in growth of defect-free silicon over silicon oxide', Journal of Applied Physics. vol.80, no.7; p.4101-4107, (1996).
68. M. G. Mauk and J. P. Curran, 'Electro-epitaxial lateral overgrowth of silicon from liquid-metal solutions', Journal of Crystal Growth. vol.225, no.2-4; p. 348-353, (2001).
69. O. Evrard, T. Vermeulen, J. Poortmans, M. Caymax, P. Laermans, J. Nijs and R. Mertens, 'The study of the influence of the layer resistivity of thin epitaxial Si cells', Proceedings of the First IEEE World Conference on Photovoltaic Energy Conversion. Conference Record of the Twenty Fourth IEEE Photovoltaic Specialists Conference-1994 (Cat.No.94CH3365-4), 1567-1570 (1994).
70. J. H. Werner, S. Kolodinski, U. Rau, J. K. Arch and E. Bauser, 'Silicon solar cell of 16.8 μm thickness and 14.7% efficiency', Applied Physics Letters. vol.62, no.23; p.2998-3000 (1993).
71. A.W. Blakers, J. H.Werner, E. Bauser and H. J. Queisser, 'Silicon epitaxial solar cell with 663-mV open-circuit voltage', Applied Physics Letters. vol.60, no.22; p.2752-2754 (1992).
72. O. Evrard, E. Demesmaeker, T. Vermeulen, M. Zagrebnov, M. Caymax, W. Laureys, J. Poortmans, J. Nijs and R. Mertens, 'Analysis of the limiting recombination mechanisms on high-efficiency thin-film cells grown with CVD epitaxy', Proceedings of the Thirteenth European Photovoltaic Solar Energy Conference, Nice, p.440 (1995).
73. A.W. Blakers, J. H.Werner, E. Bauser and H. J. Queisser, 'Silicon epitaxial solar cell with 663-mV open-circuit voltage', Applied Physics Letters, 2752-2754 (1992).
74. A.W. Blakers, K. J.Weber, M. F. Stuckings, S. Armand, G. Matlakowski, A. J. Carr, M. J. Stocks, A. Cuevas and T. Brammer, '17% efficient thin-film silicon solar cell by liquid-phase epitaxy', Progress in Photovoltaics: Research and Applications. vol.3, no.3; p. 193-195 (1995).
75. Guang Fu Zheng, Wei Zhang, Zhengrong Shi, D. Thorp and M. A. Green, 'High-efficiency driftfield thin-film silicon solar cells by liquid-phase epitaxy and substrate thinning', Conference Record of the Twenty-fifth IEEE Photovoltaic Specialists Conference - 1996 (Cat. No.96CH35897), 693-696 (1996).
76. G. Ballhorn, K. J. Weber, S Armand, M. J. Stocks and Blakers, 'High-efficiency multicrystalline silicon solar cells by liquid phase-epitaxy', Solar Energy Materials and Solar Cells. vol.52, no.1-2; p.61-68 (1998).
77. F. R. Faller, V. Henninger, A. Hurrle and N. Schillinger, 'Optimization of the CVD process for low-cost crystalline-silicon thin-film solar cells', Proceedings of the Second World Conference on PV Solar Energy Conversion, p.1278-1283 (1998).
78. F. R. Faller and A. Hurrle, 'High-temperature CVD for crystalline-silicon thin-film solar cells', IEEE Transactions on Electron Devices. vol.46, no.10; 2048-2054 (1999).
79. A. W. Blakers, K. J. Weber, M. F. Stuckings, S. Armand, G. Matlakowski, M. J. Stocks and A. Cuevas, '18%efficient thin silicon solar cell by liquid phase epitaxy', Proceedings of the Thirteenth European Photovoltaic Solar Energy Conference, Nice, p.33 (1995).
80. J. Rentsch, S. Bau and D. M. Huljic,' Screen-printed epitaxial silicon thin-film solar cells with 13.8%efficiency', Progress in Photovoltaics: Research and Applications. vol.11, no.8; p.527-534 (2003).
81. K. Van Nieuwenhuysen, F. Duerinckx, R. Bilyalov, H. Dekkers, G. Beaucarneand J. Poortmans, Proceedings of the Nineteenth European Photovoltaic Solar Energy Conference, Paris, June 7-11, 2004, p. 1178. (2004).
82. Z. C. Liang, H. Shen, N. S. Xu and S. Reber,' Characterisation of direct epitaxial silicon thin film solar cells on a low-cost substrate', Solar Energy Materials and Solar Cells, vol.80, no.2; p. 181-193 (2003).
83. S. Bau, D. M. Huljic, J. Isenberg and J. Rentsch, 'Shunt-analysis of epitaxial silicon thin-film solar cells by lock-in thermography', Conference Record of the Twenty-ninth IEEE Photovoltaic Specialists Conference 2002 (Cat. No.02CH37361), NewOrleans, May 21-24, 1335-1338 (2002).
84. S. Reber, H. Schmidhuber, H. Lautenschlager, J. Rentsch and F. Lutz, 'Solar minimodule made with epitaxial crystalline silicon thin-film wafer equivalents', Proceedings of the Nineteenth European Photovoltaic Conference, Paris, 7-11 June, 1311 (2004).
85. K. Peter, R. Kopecek, P. Fath, E. Bucher and C. Zahedi, 'Thin film silicon solar cells on upgraded metallurgical silicon substrates prepared by liquid phase epitaxy', Solar Energy MaterIals and Solar Cells, vol.74, no.1-4; p.219-223 (2002).
86. D. J. Aiken and A. M. Barnett, 'Alternative contact designs for thin epitaxial silicon solar cells', ProgRess in Photovoltaics: Research and Applications. vol.7, no.4; p.275-285, (1999).
87. S. Reber, N. Schillinger, S. Bau, B.Waldenmayer, 'Progress in high-temperature silicon epitaxy using the RTCVD 160 processor', Proceedings of the Nineteenth European Photovoltaic Conference, Paris, 7-11 June, p. 471 (2004).
88. A. Hurrle, S. Reber, N. Schillinger, J. Haase and J. G. Reichart, 'High-throughput continuous CVD reactor for silicon deposition', Proceedings of the Nineteenth European Photovoltaic Conference, Paris, 7-11 June, p. 459 (2004).
89. S. Reber, A. Eyer, F. Haas, N. Schillinger, S. Janz and E. Schmich, 'Progress in crystalline Si thinfilm solar cell at Fraunhofer ISE', Proceedings of the Twentieth European Photovoltaic Conference, Barcelona, 6-10 June, p. 459 (2004).
90. T.Kunz, I. Burkert, R. Auer, R. Brendel, W. Buss, H. v. Campe, and M. Schulz, 'Convection-assisted Chemical Vapor Deposition (COCVD) of silicon on a 40 × 40 cm2 substrate for photovoltaics', Proceedings of the Nineteenth European Photovoltaic Conference, Paris, 7-11 June, p. 903 (2004).
91. J. Poortmans, J. G. Beaucarne and S. Sivoththaman, 'Study of Si deposition in a batch-typeLPCVDsystem for industrial thin-film crystalline Si solar cells', Conference Record of the Twenty-eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036), p. 347-350 (2000).
92. K. Van Nieuwenhuysen, D. Van Gestel, I. Kuzma, F. Duerinckx, G. Beaucarne and J. Poortmans, 'Characterization of thin silicon films grown in a batch-type LP-CVD system', Twentieth European Photovoltaic Solar Energy Conference and Exhibition, Barcelona, June, 2005.
93. H. J. Rodriguez, J. C. Zamorano, I. Tobias, C. Del Canizo and A. Luque, 'High-throughput epitaxial reactor prototype for thin-film solar cells on lowgrade Si substrates', Proceedings of the Nineteenth European Photovoltaic Conference, Paris, 7-11 June, p. 903 (2005).
94. A. Luque, V. Ortuno, J. Alonso and E. Gomez, 'New concepts on epitaxial reactors for solar cells' Proceedings of the Ninth European Photovoltaic Conference, Freiburg, p. 459 (1989).
95. B. Thomas, G. Müller, P. Heidborn and H. Wawra, 'Growth of polycrystalline silicon thin films using the temperature difference method', Proceedings of the Fourteenth European Photovoltaic Conference, Barcelona, June 30-July 4, p. 1483 (1997).
96. B. Thomas, G. Muller, P.-M. Wilde and H. Wawra, 'Properties of silicon thin films grown by the temperature difference method (TDM)', Conference Record of the Twenty-sixth IEEE Photovoltaic Specialists Conference - 1997 (Cat. No.97CB36026, p. 771-774 (1997).
97. J. Nishizawa, Y. Okuno and H. Tadano, 'Nearly perfect crystal growth of III-V compounds by the temperature difference method under controlled vapour pressure', Journal of Crystal Growth. Vol.31; p. 215-222 (1975).
98. K. Peter, G. Willeke and E. Bucher, 'Rapid growth of high quality crystalline silicon by a novel temperature gradient liquid phase epitaxy', Proceedings of the Thirteenth European Photovoltaic Conference, Nice, p. 379-381 (1995).
99. K. Peter, R. Kopecek, P. Fath, E. Bucher and C. Zahedi, 'Thin-film silicon solar cells on upgraded metallurgical silicon substrates prepared by liquid phase epitaxy', Solar Energy Materials and Solar Cells. vol.74; p. 219 (2002).
100. M. Mueller, R. Kopecek, P. Fath, C. Zahedi and K. Peter, Proceedings of Third World Conference on Photovoltaic Energy Conversion, p. 1221 (2003).