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Solid State Phenomena

Volumn 80-81, Issue , 2001, Pages 95-100

Intra-grain defects - limiting factor for low-temperature polycrystalline silicon films?

(4) Wagner, T A a Oberbeck, L a Bergmann, R B a Werner, J H a

a UNIVERSITY OF STUTTGART (Germany)

Author keywords

Deep level transient spectroscopy; Diffusion length; Photoluminescence; Silicon thin films

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; CURRENT DENSITY; DEPOSITION; DIFFUSION IN SOLIDS; ELECTRONIC PROPERTIES; GRAIN SIZE AND SHAPE; IONS; LOW TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; POLYSILICON; SPECTROSCOPIC ANALYSIS;

DIFFUSION LENGTH; INTRA GRAIN DEFECTS; ION ASSISTED DEPOSITION; LOW TEMPERATURE POLYCRYSTALLINE SILICON FILMS; SILICON THIN FILMS;

THIN FILMS;

EID: 0034821543 PISSN: 10120394 EISSN: None Source Type: Book Series
DOI: 10.4028/www.scientific.net/ssp.80-81.95 Document Type: Conference Paper

Times cited : (9)

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