Material properties of polysilicon layers deposited by atmospheric pressure iodine vapor transport

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2000, Pages 138-141

  Wang, T H ^a   Ciszek, T F ^a   Page, M ^a   Yan, Y ^a   Bauer, R ^a   Wang, Q ^a   Casey, J ^a   Reedy, R ^a   Matson, R ^a   Ahrenkiel, R ^a   Al Jassim, M M ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; HALL MOBILITY; HOLE MOBILITY; IODINE; OPEN CIRCUIT VOLTAGE; PASSIVATION; POLYCRYSTALLINE MATERIALS; POLYSILICON; STACKING FAULTS;

CRYSTALLOGRAPHIC DEFECTS; DEPOSITED MATERIALS; DIRECT DEPOSITION; FOREIGN SUBSTRATES; HYDROGEN PASSIVATION; INTERMEDIATE TEMPERATURES; POLYCRYSTALLINE SILICON LAYERS; POLYSILICON LAYERS;

ATMOSPHERIC MOVEMENTS;

EID: 84949552266     PISSN: 01608371     EISSN: None     Source Type: Journal    
DOI: 10.1109/PVSC.2000.915773     Document Type: Article

References (4)

1. R.B. Bergmann, "Crystalline Si Films on Foreign Substrates for Electronic Applications," Recent Res. Devel. Crystal Growth Res., 1 (1999):241-256.
2. T.H. Wang and T.F. Ciszek, "Growth of Large-Grain Silicon Layers by Atmospheric Iodine Vapor Transport," J. The Electrochemical Society, 147(5) 1945-1949 (2000).
3. T. Sawada, N. Terada, S. Tsuge, T. Baba, T. Takahama, K. Wakisaka, S. Tsuda, and S. Nakano, "High Efficiency a-Si/c-Si Heterojunction Solar Cell," 1994 IEEE First World Conference on Photovoltaic Energy Conversion, Vol. II, p. 1219.
4. Y. Kuwano, S. Nakano, M. Tanaka, T. Takahama, T. Matsuyama, M. Isomura, N. Nakamura, H. Haku, M. Nishikuni, H. Nishiwaki, and S. Tsuda, "A More Than 18% Efficiency HIT Structure a-Si/c-Si Solar Cell Using Artificially Constructed Junction (ACJ)," Mat. Res. Soc. Symp. Proc, Vol. 258, p.857(1992).