Electronic properties of highly P and B doped thin Si layers grown by ECR-CVD

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 69, Issue , 2000, Pages 232-237

  Brehme, S ^a   Kanschat, P ^a   Lips, K ^a   Sieber, I ^a   Fuhs, W ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRON CYCLOTRON RESONANCE; GRAIN BOUNDARIES; HALL EFFECT; PHOSPHORUS; SILICON WAFERS; SUBSTRATES; THIN FILMS;

MICROCRYSTALLINE SILICON; POWER LAW;

CRYSTALLINE MATERIALS;

EID: 0033899645     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00301-3     Document Type: Article

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