Analysis of recombination centers in epitaxial silicon thin-film solar cells by temperature-dependent quantum efficiency measurements

Applied Physics Letters

Volumn 82, Issue 16, 2003, Pages 2637-2639

  Wagner, T A ^a   Rau, U ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHARGE CARRIERS; EPITAXIAL GROWTH; PHOTOVOLTAIC CELLS; QUANTUM ELECTRONICS; THIN FILMS;

TEMPERATURE DEPENDENT QUANTUM EFFICIENCY (TQE) METHOD;

SOLAR CELLS;

EID: 0038559981     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1566481     Document Type: Article

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