Low-temperature silicon epitaxy by ion-assisted deposition

Solid State Phenomena

Volumn 67, Issue , 1999, Pages 459-464

  Oberbeck, L ^a   Bergmann, R B ^a   Jensen, N ^a   Oelting, S ^b   Werner, J H ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

^b ANTEC GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRON GUNS; EPITAXIAL GROWTH; ETCHING; EVAPORATION; FILM GROWTH; ION BEAMS; IONIZATION; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON SOLAR CELLS;

ION ASSISTED DEPOSITION (IAD);

SEMICONDUCTING SILICON;

EID: 0032689554     PISSN: 10120394     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/ssp.67-68.459     Document Type: Article

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