Tuning carrier confinement in the MoS2/WS2 lateral heterostructure

Journal of Physical Chemistry C

Volumn 119, Issue 17, 2015, Pages 9580-9586

  Kang, Jun ^a   Sahin, Hasan ^a   Peeters, François M ^a  

^a UNIVERSITY OF ANTWERP   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALIGNMENT; CALCULATIONS; GRAIN BOUNDARIES; INTERFACE STATES; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR QUANTUM WELLS; TUNGSTEN COMPOUNDS; TUNING; WAVE FUNCTIONS;

CARRIER CONFINEMENTS; CHARGE CONFINEMENT; CHARGE LOCALIZATION; ELECTRONS AND HOLES; FIRST-PRINCIPLES CALCULATION; SPATIAL CONFINEMENT; TYPE I BAND ALIGNMENTS; VALENCE-BAND MAXIMUMS;

TENSILE STRAIN;

EID: 84928791294     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/acs.jpcc.5b00814     Document Type: Article

References (34)

1. Grigorieva, I. V.; Geim, A. K. Van der Waals heterostructures Nature (London) 2013, 499, 419-425
2. Xia, F.; Wang, H.; Xiao, D.; Dubey, M.; Ramasubramaniam, A. Two-dimensional material nanophotonics Nat. Photonics 2014, 8, 899-907
3. Haigh, S. J.; Gholinia, A.; Jalil, R.; Romani, S.; Britnell, L.; Elias, D. C.; Novoselov, K. S.; Ponomarenko, L. A.; Geim, A. K.; Gorbachev, R. Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices Nat. Mater. 2012, 11, 764-767
4. Choi, M. S.; Lee, G.-H.; Yu, Y.-J.; Lee, D.-Y.; Lee, S. H.; Kim, P.; Hone, J.; Yoo, W. J. Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices Nat. Commun. 2013, 4, 1624
5. 2 monolayers Nat. Mater. 2014, 13, 1135-1142
6. 2 heterostructures Nat. Nanotechnol. 2014, 9, 682-686
7. 2 monolayers Nano Lett. 2014, 14, 3185-3190
8. Li, J.; Wang, L.-W. First principle study of core/shell structure quantum dots Appl. Phys. Lett. 2004, 84, 3648-3650
9. Kang, J.; Tongay, S.; Zhou, J.; Li, J.; Wu, J. Band offsets and heterostructures of two-dimensional semiconductors Appl. Phys. Lett. 2013, 102, 012111
10. Liang, Y.; Huang, S.; Soklaski, R.; Yang, L. Quasiparticle bandedge energy and band offsets of monolayer of molybdenum and tungsten chalcogenides Appl. Phys. Lett. 2013, 103, 042106
11. 2 under elastic strain Phys. Lett. A 2012, 376, 1166-1170
12. 2 semiconductors(M = Mo, W; X = S, Se, Te) Phys. Rev. B 2012, 85, 033305
13. 2 Nano Lett. 2013, 13, 2931-2936
14. Johari, P.; Shenoy, V. B. Tuning the electronic properties of semiconducting transition metal dichalcogenides by applying mechanical strains ACS Nano 2012, 6, 5449-5456
15. Lahiri, J.; Lin, Y.; Bozkurt, P.; Oleynik, I. I.; Batzill, M. An extended defect in graphene as a metallic wire Nat. Nanotechnol. 2010, 5, 326-329
16. Zou, X.; Liu, Y.; Yakobson, B. I. Predicting dislocations and grain boundaries in two-dimensional metal-disulfides from the firstprinciples Nano Lett. 2013, 13, 253-258
17. Singh, A. K.; Yakobson, B. I. Electronics and magnetism of patterned graphene nanoroads Nano Lett. 2009, 9, 1540-1543
18. 2 through size effects Phys. Chem. Chem. Phys. 2015, 17, 1099
19. 2 2D heterostructures Nano Lett. 2013, 13, 5485-5490
20. Kresse, G.; Hafner, J. Ab Initio molecular dynamics for liquidmetals Phys. Rev. B 1993, 47, 558-561
21. Kresse, G.; Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Phys. Rev. B 1996, 54, 11169-11186
22. Blöchl, P. Projector augmented-wave method Phys. Rev. B 1994, 50, 17953-17979
23. Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized gradient approximation made simple Phys. Rev. Lett. 1996, 77, 3865-3868
24. Monkhorst, H. J.; Pack, J. D. Special points for brillouin-zone integrations Phys. Rev. B 1976, 13, 5188-5192
25. Grimme, S. Semiempirical GGA-type density functional constructed with a long-range dispersion correction J. Comput. Chem. 2006, 27, 1787-1799
26. 2 Phys. Rev. B 2013, 87, 125415
27. 2 J. Mater. Chem. A 2014, 2, 2101-2109
28. Wei, S.; Zunger, A. Calculated natural band offsets of all II-VI and III-V semiconductors: Chemical trends and the role of cation d orbitals Appl. Phys. Lett. 1998, 72, 2011-2013
29. Soler, J. M.; Artacho, E.; Gale, J. D.; García, A.; Junquera, J.; Ordejón, P.; Sánchez-Portal, D. The SIESTA method for ab initio order-N materials simulation J. Phys.: Condens. Matter 2002, 14, 2745-2779
30. Wu, Z. G.; Neaton, J. B.; Grossman, J. C. Charge separation via strain in silicon nanowires Nano Lett. 2009, 9, 2418-2422
31. van der Zande, A. M.; Huang, P. Y.; Chenet, D. A.; Berkelbach, T. C.; You, Y.; Lee, G.-H.; Heinz, T. F.; Reichman, D. R.; Muller, D. A.; Hone, J. C. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide Nat. Mater. 2013, 12, 554-561
32. Najmaei, S.; Liu, Z.; Zhou, W.; Zou, X.; Shi, G.; Lei, S.; Yakobson, B. I.; Idrobo, J.-C.; Ajayan, P. M.; Lou, J. Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers Nat. Mater. 2013, 12, 754-759
33. 2 heterojunction Phys. Rev. B 2013, 87, 075451
34. 2 ACS Nano 2011, 5, 9703-9709