Molecular Oxygen Induced in-Gap States in PbS Quantum Dots

ACS Nano

Volumn 9, Issue 10, 2015, Pages 10445-10452

  Zhang, Yingjie ^a,c   Zherebetskyy, Danylo ^c   Bronstein, Noah D ^a   Barja, Sara ^c   Lichtenstein, Leonid ^c   Alivisatos, A Paul ^a,b,c,d   Wang, Lin Wang ^c   Salmeron, Miquel ^b,c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of California Berkeley   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d Kavli Energy NanoSciences Institute   (United States)

Author keywords

defect; DFT calculation; in gap states; molecular oxygen; nanocrystal; PbS quantum dot; scanning probe microscopy

Indexed keywords

DEFECTS; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; MOLECULAR OXYGEN; NANOCRYSTALS; OPTOELECTRONIC DEVICES; OXYGEN; QUANTUM THEORY; REDUCING AGENTS; SCANNING PROBE MICROSCOPY; SEMICONDUCTING LEAD COMPOUNDS; SPECTROSCOPIC ANALYSIS; VACANCIES;

CHEMICAL SPECTROSCOPIES; DFT CALCULATION; IMPURITY ADSORPTION; IN-GAP STATE; INTRINSIC VACANCIES; IONIC SEMICONDUCTORS; LARGE-AREA ELECTRONICS; OPTOELECTRONIC APPLICATIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84945926239     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b04677     Document Type: Article

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