Quantum dot size dependent J - V characteristics in heterojunction ZnO/PbS quantum dot solar cells

Nano Letters

Volumn 11, Issue 3, 2011, Pages 1002-1008

  Gao, Jianbo ^a,b   Luther, Joseph M ^a   Semonin, Octavi E ^a,c   Ellingson, Randy J ^b   Nozik, Arthur J ^a,c   Beard, Matthew C ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b UNIVERSITY OF TOLEDO   (United States)

^c UNIVERSITY OF COLORADO   (United States)

Author keywords

double diode; heterojunction; PbS; Quantum Dots; solar cells

Indexed keywords

BAND ALIGNMENTS; CROSSOVER EFFECTS; CURRENT VOLTAGE; DOUBLE DIODE; FERMI LEVEL PINNING; FORWARD BIAS; J-V CHARACTERISTICS; KELVIN PROBE MEASUREMENTS; LAYER THICKNESS; METAL CONTACTS; METAL ELECTRODES; METAL WORK FUNCTION; OPTIMAL LAYER THICKNESS; P-TYPE; PBS; QUANTUM DOT SOLAR CELLS; QUANTUM DOTS; QUANTUM-DOT SIZE; SCHOTTKY; SCHOTTKY JUNCTIONS; ZNO; ZNO NANOCRYSTAL;

BEHAVIORAL RESEARCH; DIODES; HETEROJUNCTIONS; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS; ZINC OXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79952604580     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl103814g     Document Type: Article

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