Designing high-performance PbS and PbSe nanocrystal electronic devices through stepwise, post-synthesis, colloidal atomic layer deposition

Nano Letters

Volumn 14, Issue 3, 2014, Pages 1559-1566

  Oh, Soong Ju ^a   Berry, Nathaniel E ^a   Choi, Ji Hyuk ^a,c   Gaulding, E Ashley ^a   Lin, Hangfei ^a   Paik, Taejong ^b   Diroll, Benjamin T ^b   Muramoto, Shin ^d   Murray, Christopher B ^a,b   Kagan, Cherie R ^a,b  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

^b UNIVERSITY OF PENNSYLVANIA   (United States)

^c Department of Chemistry University of Pennsylvania ^*  (United States)

^d NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

colloidal atomic layer deposition; field effect transistor; Lead chalcogenide; nanocrystals; solution process; stoichiometry

Indexed keywords

ATOMIC LAYER DEPOSITION; CHALCOGENIDES; CHLORINE COMPOUNDS; ELECTRONIC PROPERTIES; FIELD EFFECT TRANSISTORS; NANOCRYSTALS; SEMICONDUCTING LEAD COMPOUNDS; STOICHIOMETRY; THIN FILMS;

ELECTRONIC DEVICE; FIELD-EFFECT MOBILITIES; LEAD CHALCOGENIDES; LEAD CHLORIDES; PBSE NANOCRYSTALS; POSTSYNTHESIS; SOLUTION PROCESS; SURFACE STOICHIOMETRY;

DEPOSITION;

EID: 84896321890     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl404818z     Document Type: Article

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