Charge percolation pathways guided by defects in quantum dot solids

Nano Letters

Volumn 15, Issue 5, 2015, Pages 3249-3253

  Zhang, Yingjie ^a,b   Zherebetskyy, Danylo ^b   Bronstein, Noah D ^a   Barja, Sara ^b   Lichtenstein, Leonid ^b   Schuppisser, David ^b   Wang, Lin Wang ^b   Alivisatos, A Paul ^a,b,c,d   Salmeron, Miquel ^b,c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c University of California Berkeley   (United States)

^d Kavli Energy NanoSciences Institute   (United States)

Author keywords

charge percolation; charge transport; defect; in gap states; Kelvin probe force microscopy; Quantum dot

Indexed keywords

CHARGE TRANSFER; DEFECTS; ELECTRONIC STRUCTURE; NANOCRYSTALS; PROBES; QUANTUM CHEMISTRY; QUANTUM THEORY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DOPING; SOLVENTS; SURFACE DEFECTS;

CHEMICAL TREATMENTS; ENERGY LEVEL ALIGNMENT; IN-GAP STATE; KELVIN PROBE FORCE MICROSCOPY; PERCOLATION PROCESS; QUANTUM DOT; SCANNING TUNNELING SPECTROSCOPY; VALENCE BAND STATE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84929148332     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/acs.nanolett.5b00454     Document Type: Article

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