Impact of stoichiometry on the electronic structure of PbS quantum dots

Physical Review Letters

Volumn 110, Issue 19, 2013, Pages

  Kim, Donghun ^a   Kim, Dong Ho ^b   Lee, Joo Hyoung ^c   Grossman, Jeffrey C ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT STATE; FIRST-PRINCIPLES CALCULATION; LEAD SULFIDE; LIGAND MOLECULES; LIGAND PASSIVATION; OPTIMAL NUMBER; PBS QUANTUM DOTS; SURFACE ATOMS;

CALCULATIONS; ELECTRONIC STRUCTURE; LIGANDS; OPTOELECTRONIC DEVICES; PASSIVATION; SEMICONDUCTOR QUANTUM DOTS;

STOICHIOMETRY;

EID: 84877315229     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.110.196802     Document Type: Article

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