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Volumn 6, Issue 5, 2014, Pages 2879-2886

MoS2/MX2 heterobilayers: Bandgap engineering via tensile strain or external electrical field

(8) Lu, Ning a,b Guo, Hongyan b,c Li, Lei b Dai, Jun b Wang, Lu c,d Mei, Wai Ning d Wu, Xiaojun c,e Zeng, Xiao Cheng b,e

a ANHUI NORMAL UNIVERSITY (China)

b UNIVERSITY OF NEBRASKA LINCOLN (United States)

c UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

d UNIVERSITY OF NEBRASKA AT OMAHA (United States)

e UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84894648640 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c3nr06072a Document Type: Article

Times cited : (359)

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