Chemically Modulated Band Gap in Bilayer Graphene Memory Transistors with High On/Off Ratio

ACS Nano

Volumn 9, Issue 9, 2015, Pages 9034-9042

  Lee, Si Young ^a,b   Duong, Dinh Loc ^a,c   Vu, Quoc An ^a   Jin, Youngjo ^a   Kim, Philip ^b   Lee, Young Hee ^a  

^a Sungkyunkwan University   (South Korea)

^b HARVARD UNIVERSITY   (United States)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

band gap opening; bilayer graphene; doping; nonvolatile memory; on off ratio

Indexed keywords

DOPING (ADDITIVES); ENERGY GAP; FIELD EFFECT TRANSISTORS; NONVOLATILE STORAGE; SWITCHING;

BILAYER GRAPHENE; ELECTRON WITHDRAWING GROUP; ELECTRON-DONATING GROUP; GAP OPENING; MEMORY TRANSISTORS; NON-VOLATILE MEMORY; ON/OFF RATIO; STRUCTURAL DISORDERS;

GRAPHENE;

EID: 84942357981     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/acsnano.5b03130     Document Type: Article

References (37)

1. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V.; Dubonos, S. V.; Firsov, A. A. Two-Dimensional Gas of Massless Dirac Fermions in Graphene Nature 2005, 438, 197-200 10.1038/nature04233
2. Zhang, Y.; Tan, Y.-W.; Stormer, H. L.; Kim, P. Experimental Observation of the Quantum Hall Effect and Berry's Phase in Graphene Nature 2005, 438, 201-204 10.1038/nature04235
3. Katsnelson, M. I.; Novoselov, K. S.; Geim, A. K. Chiral Tunnelling and the Klein Paradox in Graphene Nat. Phys. 2006, 2, 620-625 10.1038/nphys384
4. Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L. et al. Boron Nitride Substrates for High-Quality Graphene Electronics Nat. Nanotechnol. 2010, 5, 722-726 10.1038/nnano.2010.172
5. Yang, H.; Heo, J.; Park, S.; Song, H. J.; Seo, D. H.; Byun, K.-E.; Kim, P.; Yoo, I.; Chung, H.-J.; Kim, K. Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier Science 2012, 336, 1140-1143 10.1126/science.1220527
6. Bae, S.; Kim, H.; Lee, Y.; Xu, X.; Park, J.-S.; Zheng, Y.; Balakrishnan, J.; Lei, T.; Kim, H. R.; Song, Y. I. et al. Roll-to-Roll Production of 30-Inch Graphene Films for Transparent Electrodes Nat. Nanotechnol. 2010, 5, 574-578 10.1038/nnano.2010.132
7. Chae, S. J.; Günes, F.; Kim, K. K.; Kim, E. S.; Han, G. H.; Kim, S. M.; Shin, H.-J.; Yoon, S.-M.; Choi, J.-Y.; Park, M. H. et al. Synthesis of Large-Area Graphene Layers on Poly-Nickel Substrate by Chemical Vapor Deposition: Wrinkle Formation Adv. Mater. 2009, 21, 2328-2333 10.1002/adma.200803016
8. Liao, L.; Lin, Y.-C.; Bao, M.; Cheng, R.; Bai, J.; Liu, Y.; Qu, Y.; Wang, K. L.; Huang, Y.; Duan, X. High-Speed Graphene Transistors with a Self-Aligned Nanowire Gate Nature 2010, 467, 305-308 10.1038/nature09405
9. Kim, B. J.; Lee, S.-K.; Kang, M. S.; Ahn, J.-H.; Cho, J. H. Coplanar-Gate Transparent Graphene Transistors and Inverters on Plastic ACS Nano 2012, 6, 8646-8651 10.1021/nn3020486
10. Yun, J. M.; Park, S.; Hwang, Y. H.; Lee, E.-S.; Maiti, U.; Moon, H.; Kim, B.-H.; Bae, B.-S.; Kim, Y.-H.; Kim, S. O. Complementary p- and n-type Polymer Doping for Ambient Stable Graphene Inverter ACS Nano 2014, 8, 650-656 10.1021/nn4053099
11. Kim, S. M.; Song, E. B.; Lee, S.; Zhu, J.; Seo, D. H.; Mecklenburg, M.; Seo, S.; Wang, K. L. Transparent and Flexible Graphene Charge-Trap Memory ACS Nano 2012, 6, 7879-7884 10.1021/nn302193q
12. Choi, M. S.; Lee, G.-H.; Yu, Y.-J.; Lee, D.-Y.; Lee, S. H.; Kim, P.; Hone, J.; Yoo, W. J. Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices Nat. Commun. 2013, 4, 1624 10.1038/ncomms2652
13. Li, X.; Wang, X.; Zhang, L.; Lee, S.; Dai, H. Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors Science 2008, 319, 1229-1232 10.1126/science.1150878
14. Wang, X.; Ouyang, Y.; Li, X.; Wang, H.; Guo, J.; Dai, H. Room-Temperature All-Semiconducting Sub-10 nm Graphene Nanoribbon Field Effect Transistors Phys. Rev. Lett. 2008, 100, 206803 10.1103/PhysRevLett.100.206803
15. Zhang, Y.; Tang, T.-T.; Girit, C.; Hao, Z.; Martin, M. C.; Zettl, A.; Crommie, M. F.; Shen, Y. R.; Wang, F. Direct Observation of a Widely Tunable Bandgap in Bilayer Graphene Nature 2009, 459, 820-823 10.1038/nature08105
16. Xia, F.; Farmer, D. B.; Lin, Y.-M.; Avouris, P. Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature Nano Lett. 2010, 10, 715-718 10.1021/nl9039636
17. Mak, K. F.; Lui, C. H.; Shan, J.; Heinz, T. F. Observation of an Electric-Field-Induced Band Gap in Bilayer Graphene by Infrared Spectroscopy Phys. Rev. Lett. 2009, 102, 256405 10.1103/PhysRevLett.102.256405
18. Park, J.; Jo, S. B.; Yu, Y.-J.; Kim, Y.; Yang, J. W.; Lee, W. H.; Kim, H. H.; Hong, B. H.; Kim, P.; Cho, K. et al. Single-Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping Adv. Mater. 2012, 24, 407-411 10.1002/adma.201103411
19. Duong, D. L.; Lee, S. M.; Chae, S. H.; Ta, Q. H.; Lee, S. Y.; Han, G. H.; Bae, J. J.; Lee, Y. H. Band-Gap Engineering in Chemically Conjugated Bilayer Graphene: Ab initio Calculations Phys. Rev. B: Condens. Matter Mater. Phys. 2012, 85, 205413 10.1103/PhysRevB.85.205413
20. Wang, T. H.; Zhu, Y. F.; Jiang, Q. Towards Single-Gate Field Effect Transistor Utilizing Dual-Doped Bilayer Graphene Carbon 2014, 77, 431-441 10.1016/j.carbon.2014.05.048
21. Yang, J. W.; Lee, G.; Kim, J. S.; Kim, K. S. Gap Opening of Graphene by Dual FeCl3-Acceptor and K-Donor Doping J. Phys. Chem. Lett. 2011, 2, 2577-2581 10.1021/jz201098u
22. Novoselov, K. S.; Fal'ko, V. I.; Colombo, L.; Gellert, P. R.; Schwab, M. G.; Kim, K. A Roadmap for Graphene Nature 2012, 490, 192-200 10.1038/nature11458
23. Luo, Z.; Yu, T.; Shang, J.; Wang, Y.; Lim, S.; Liu, L.; Gurzadyan, G. G.; Shen, Z.; Lin, J. Large-Scale Synthesis of Bi-Layer Graphene in Strongly Coupled Stacking Order Adv. Funct. Mater. 2011, 21, 911-917 10.1002/adfm.201002227
24. Wei, P.; Liu, N.; Lee, H. R.; Adijanto, E.; Ci, L.; Naab, B. D.; Zhong, J. Q.; Park, J.; Chen, W.; Cui, Y. et al. Tuning the Dirac Point in CVD-Grown Graphene Through Solution Processed n-Type Doping with 2-(2-Methoxyphenyl)-1,3-dimethyl-2,3-dihydro-1H-benzoimidazole Nano Lett. 2013, 13, 1890-1897 10.1021/nl303410g
25. Zhang, W.; Lin, C.-T.; Liu, K.-K.; Tite, T.; Su, C.-Y.; Chang, C.-H.; Lee, Y.-H.; Chu, C.-W.; Wei, K.-H.; Kuo, J.-L. et al. Opening an Electrical Band Gap of Bilayer Graphene with Molecular Doping ACS Nano 2011, 5, 7517-7524 10.1021/nn202463g
26. Lin, S. S.; Chen, B. G.; Pan, C. T.; Hu, S.; Tian, P.; Tong, L. M. Unintentional Doping Induced Splitting of G Peak in Bilayer Graphene Appl. Phys. Lett. 2011, 99, 233110 10.1063/1.3666821
27. Wang, H.; Wu, Y.; Cong, C.; Shang, J.; Yu, T. Hysteresis of Electronic Transport in Graphene Transistors ACS Nano 2010, 4, 7221-7228 10.1021/nn101950n
28. Ryu, S.; Liu, L.; Berciaud, S.; Yu, Y.-J.; Liu, H.; Kim, P.; Flynn, G. W.; Brus, L. E. Atmospheric Oxygen Binding and Hole Doping in Deformed Graphene on a SiO2 Substrate Nano Lett. 2010, 10, 4944-4951 10.1021/nl1029607
29. Szafranek, B. N.; Schall, D.; Otto, M.; Neumaier, D.; Kurz, H. High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants Nano Lett. 2011, 11, 2640-2643 10.1021/nl200631m
30. Chou, Y.-H.; Takasugi, S.; Goseki, R.; Ishizone, T.; Chen, W.-C. Nonvolatile Organic Field-Effect Transistor Memory Devices Using Polymer Electrets with Different Thiophene Chain Lengths Polym. Chem. 2014, 5, 1063-1071 10.1039/C3PY01124K
31. Zheng, Y.; Ni, G.-X.; Toh, C.-T.; Tan, C.-Y.; Yao, K.; Özyilmaz, B. Graphene Field-Effect Transistors with Ferroelectric Gating Phys. Rev. Lett. 2010, 105, 166602 10.1103/PhysRevLett.105.166602
32. Egginger, M.; Bauer, S.; Schwödiauer, R.; Neugebauer, H.; Sariciftci, N. S. Current versus Gate Voltage Hysteresis in Organic Field Effect Transistors Monatsh. Chem. 2009, 140, 735-750 10.1007/s00706-009-0149-z
33. Chae, S. H.; Yu, W. J.; Bae, J. J.; Duong, D. L.; Perello, D.; Jeong, H. Y.; Ta, Q. H.; Ly, T. H.; Vu, Q. A.; Yun, M. et al. Transferred Wrinkled Al2O3 for Highly Stretchable and Transparent Graphene-Carbon Nanotube Transistors Nat. Mater. 2013, 12, 403-409 10.1038/nmat3572
34. Jin, S. H.; Islam, A. E.; Kim, T.-I.; Kim, J.-H.; Alam, M. A.; Rogers, J. A. Sources of Hysteresis in Carbon Nanotube Field-Effect Transistors and Their Elimination Via Methylsiloxane Encapsulants and Optimized Growth Procedures Adv. Funct. Mater. 2012, 22, 2276-2284 10.1002/adfm.201102814
35. Jang, S.; Hwang, E.; Cho, J. H. Graphene Nano-Floating Gate Transistor Memory on Plastic Nanoscale 2014, 6, 15286-15292 10.1039/C4NR04117H
36. Song, E. B.; Lian, B.; Kim, S. M.; Lee, S.; Chung, T.-K.; Wang, M.; Zeng, C.; Xu, G.; Wong, K.; Zhou, Y. et al. Robust Bi-Stable Memory Operation in Single-Layer Graphene Ferroelectric Memory Appl. Phys. Lett. 2011, 99, 042109 10.1063/1.3619816
37. Imam, S. A.; Deshpande, T.; Guermoune, A.; Siaj, M.; Szkopek, T. Charge Transfer Hysteresis in Graphene Dual-Dielectric Memory Cell Structures Appl. Phys. Lett. 2011, 99, 082109 10.1063/1.3630227