Opening an electrical band gap of bilayer graphene with molecular doping

ACS Nano

Volumn 5, Issue 9, 2011, Pages 7517-7524

  Zhang, Wenjing ^a   Lin, Cheng Te ^a   Liu, Keng Ku ^a   Tite, Teddy ^a   Su, Ching Yuan ^a   Chang, Chung Huai ^b   Lee, Yi Hsien ^a   Chu, Chih Wei ^a   Wei, Kung Hwa ^c   Kuo, Jer Lai ^b   Li, Lain Jong ^a,c  

^a RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

^b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

band gap opening; bilayer grapheme; doping; on off current ratio; Raman spectroscopy; transistor; triazine

Indexed keywords

AMBIENT CONDITIONS; BAND GAPS; BI-LAYER; BOTTOM LAYERS; DENSITY-FUNCTIONAL THEORY CALCULATIONS; ELECTRIC DISPLACEMENT FIELDS; IN-PLANE; INVERSION SYMMETRY; MOLECULAR DOPING; ON/OFF CURRENT RATIO; ORGANIC MOLECULES; P-DOPING; ROOM TEMPERATURE; SIMPLE METHOD; THIN COATING; TOP GATE; TOP SURFACE; TRIAZINE;

DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRIC FIELDS; GRAPHENE; LOGIC CIRCUITS; RAMAN SPECTROSCOPY; TRANSISTORS;

ENERGY GAP;

EID: 80053329064     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn202463g     Document Type: Article

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