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Applied Physics Letters

Volumn 99, Issue 8, 2011, Pages

Charge transfer hysteresis in graphene dual-dielectric memory cell structures

(5) Imam, S A a,b Deshpande, T a,b Guermoune, A c,d Siaj, M c,d Szkopek, T a,b

a Regroupement Quebecois sur les Materiaux de Pointe (Canada)

b MCGILL UNIVERSITY (Canada)

c Centre Québecois sur les Matériaux Fonctionnels Québec (Canada)

d UNIVERSITÉ DU QUÉBEC À MONTRÉAL (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOUR DEPOSITION; ELECTRON TRANSFER; GATE VOLTAGES; MEMORY CELL; NITRIDE TRAPS; OXIDE SUBSTRATES; POOLE-FRENKEL; ROOM TEMPERATURE; SCHOTTKY; TEST STRUCTURE; THERMALLY ACTIVATED;

CHARGE TRANSFER; CHEMICAL VAPOR DEPOSITION; ELECTRIC RESISTANCE; HYSTERESIS; ION EXCHANGE; NITRIDES; SUBSTRATES;

GRAPHENE;

EID: 80052421086 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3630227 Document Type: Article

Times cited : (36)

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