Complementary p- and n-type polymer doping for ambient stable graphene inverter

ACS Nano

Volumn 8, Issue 1, 2014, Pages 650-656

  Yun, Je Moon ^a,b   Park, Seokhan ^b   Hwang, Young Hwan ^b   Lee, Eui Sup ^a,b   Maiti, Uday ^a,b   Moon, Hanul ^b   Kim, Bo Hyun ^b   Bae, Byeong Soo ^b   Kim, Yong Hyun ^a,b   Kim, Sang Ouk ^a,b  

^a Institute for Basic Science   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

doping; FET; graphene; inverter; polymer

Indexed keywords

AMBIENT CONDITIONS; ENVIRONMENTAL SENSITIVITIES; FET; GRAPHENE TRANSISTORS; INHERENT LIMITATIONS; INVERTER; POLY(4-VINYL PYRIDINE); SILICON ELECTRONICS;

DOPING (ADDITIVES); FLEXIBLE ELECTRONICS; POLYMERS; SEMICONDUCTOR DOPING;

GRAPHENE;

EID: 84893449675     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn4053099     Document Type: Article

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