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Applied Physics Letters

Volumn 99, Issue 23, 2011, Pages

Unintentional doping induced splitting of G peak in bilayer graphene

(6) Lin, S S a,b Chen, B G a Pan, C T b Hu, S b Tian, P b Tong, L M a

a ZHEJIANG UNIVERSITY (China)

b UNIVERSITY OF MANCHESTER (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; DOPING CONCENTRATION; RAMAN CHARACTERIZATION; RELATIVE SHIFT; UNINTENTIONAL DOPING;

DOPING (ADDITIVES); MONOLAYERS; SINGLE CRYSTALS;

GRAPHENE;

EID: 83455228545 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3666821 Document Type: Article

Times cited : (17)

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