Erratum: Breakdown of high-performance monolayer MoS2 transistors (ACS Nano (2012) 6 (10070-10075) DOI: 10.1021/nn303772b)

ACS Nano

Volumn 7, Issue 4, 2013, Pages 3730-

  Lembke, Dominik ^a   Kis, Andras ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84876584262     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn400554k     Document Type: Erratum

References (5)

1. 2 Transistors ACS Nano 2012, 6, 10070-10075
2. Lemme, M. C. A Graphene Field-Effect Device IEEE Electron Device Lett. 2007, 28, 282
3. 2. 2013, 1301, 4947, arXiv:1301.4947.
4. 2 Transistors. 2013, 1301, 4288, arXiv:1301.4288.
5. 2 Transistors". 2013, 1301, 4945, arXiv:1301.4945.