Controlling the metal to semiconductor transition of MoS2 and WS2 in solution

Journal of the American Chemical Society

Volumn 137, Issue 5, 2015, Pages 1742-1745

  Chou, Stanley S ^a   Huang, Yi Kai ^b   Kim, Jaemyung ^b   Kaehr, Bryan ^a   Foley, Brian M ^c   Lu, Ping ^a   Dykstra, Conner ^b,d   Hopkins, Patrick E ^c   Brinker, C Jeffrey ^a,d   Huang, Jiaxing ^b   Dravid, Vinayak P ^b  

^a ADVANCED MATERIALS LABORATORY   (United States)

^b NORTHWESTERN UNIVERSITY   (United States)

^c University of Virginia   (United States)

^d UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SYNTHESIS (CHEMICAL);

CHEMICAL EXFOLIATIONS; ELEVATED TEMPERATURE; METAL-TO-SEMICONDUCTOR TRANSITION; METALLIC PHASE; SEMI-CONDUCTING PROPERTY; SOLID SUBSTRATES; SOLUTION-PROCESSING; SURFACE FUNCTIONALIZATION;

MOLYBDENUM COMPOUNDS;

METAL; ORGANIC SOLVENT; DISULFIDE; MOLYBDENUM; MOLYBDENUM DISULFIDE; SOLUTION AND SOLUBILITY; SOLVENT; TUNGSTEN DERIVATIVE;

ARTICLE; DISPERSION; LIQUID CULTURE; LITHIATION; PHASE TRANSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR; SURFACE PROPERTY; THERMOGRAVIMETRY; CHEMICAL STRUCTURE; CHEMISTRY; CONFORMATION; SOLUTION AND SOLUBILITY;

DISULFIDES; MODELS, MOLECULAR; MOLECULAR CONFORMATION; MOLYBDENUM; SEMICONDUCTORS; SOLUTIONS; SOLVENTS; SURFACE PROPERTIES; TUNGSTEN COMPOUNDS;

EID: 84922763691     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja5107145     Document Type: Article

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