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Volumn 349, Issue , 2015, Pages 673-682

Highly-conformal p-type copper(I) oxide (Cu 2 O) thin films by atomic layer deposition using a fluorine-free amino-alkoxide precursor

(9) Kim, Hangil a Lee, Min Young a Kim, Soo Hyun a Bae, So Ik b Ko, Kyung Yong c Kim, Hyungjun c Kwon, Kyeong Woo d Hwang, Jin Ha d Lee, Do Joong e

a Yeungnam University (South Korea)

b Global Frontier RandD Center for Hybrid Interface Materials (HIM) (South Korea)

c Yonsei University (South Korea)

d Hong Ik University (South Korea)

e Brown University (United States)

Author keywords

Atomic layer deposition; Conformality; Cu 2 O thin films; p Type semiconductor

Indexed keywords

ASPECT RATIO; ATOMS; COPPER OXIDES; CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; ENERGY GAP; FILM GROWTH; HALL MOBILITY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; OXIDE FILMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

CONFORMALITY; CONSTANT GROWTH RATES; CUBIC CRYSTAL STRUCTURES; DEPOSITION TEMPERATURES; OPTIMAL TEMPERATURE; P TYPE SEMICONDUCTOR; RUTHERFORD BACK-SCATTERING SPECTROMETRY; TRANSMISSION ELECTRON;

ATOMIC LAYER DEPOSITION;

EID: 84937690242 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2015.05.062 Document Type: Article

Times cited : (37)

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