Physical properties of copper oxide thin films prepared by dc reactive magnetron sputtering under different oxygen partial pressures

Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4831-4834

  Chu, Chun Lung ^a   Lu, Hsin Chun ^a   Lo, Chen Yang ^a   Lai, Chi You ^a   Wang, Yu Hsiang ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Cuprous oxide; Oxygen partial pressure; Sputtering; Thin film; XPS

Indexed keywords

COPPER OXIDE THIN FILMS; CUPROUS OXIDE; DC REACTIVE MAGNETRON SPUTTERING; ELECTRONIC CHARACTERISTICS; GLASS SUBSTRATES; NANO-STRUCTURED; OXYGEN PARTIAL PRESSURE; P-TYPE; XPS;

COPPER; ELECTRIC PROPERTIES; MAGNETRONS; OPTICAL PROPERTIES; OXYGEN; PARTIAL PRESSURE; POSITIVE IONS; SEMICONDUCTING FILMS; THIN FILM DEVICES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

OXIDE FILMS;

EID: 74349113452     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.185     Document Type: Article

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