Fabrication of coaxial p-Cu2O/n-ZnO nanowire photodiodes

Superlattices and Microstructures

Volumn 49, Issue 5, 2011, Pages 572-580

  Hsueh, H T ^a,c   Chang, S J ^a   Hung, F Y ^a   Weng, W Y ^a   Hsu, C L ^b   Hsueh, T J ^c   Tsai, T Y ^a   Dai, B T ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

^c National Nano Devices Laboratories   (Taiwan)

Author keywords

Cu2O; p Cu2O n ZnO; ZnO nanowire

Indexed keywords

AVERAGE DIAMETER; AVERAGE LENGTH; CONTRAST RATIO; CU2O; DC SPUTTERING; FAST RESPONSE; SPUTTERING PARAMETERS; STEP COVERAGE; WELL-ALIGNED; ZNO; ZNO NANOWIRES;

DISTILLATION; NANOWIRES; PHOTODIODES;

ZINC OXIDE;

EID: 79955478792     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2011.03.011     Document Type: Article

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