An effective way to simultaneous realization of excellent optical and electrical performance in large-scale Si nano/microstructures

Progress in Photovoltaics: Research and Applications

Volumn 23, Issue 8, 2015, Pages 964-972

  Huang, Zengguang ^a,b   Zhong, Sihua ^a   Hua, Xia ^a   Lin, Xingxing ^a   Kong, Xiangyang ^a   Dai, Ning ^c   Shen, Wenzhong ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b HUAIHAI INSTITUTE OF TECHNOLOGY   (China)

^c SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

Al2O3; atomic layer deposition; field effect passivation; large scale; minority carrier lifetime; silicon nanowires

Indexed keywords

ALUMINA; ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; CHARGE CARRIERS; ECONOMIC AND SOCIAL EFFECTS; EFFICIENCY; ETCHING; NANOWIRES; SILICON SOLAR CELLS; SILICON WAFERS; TEXTURES;

AL2O3; FIELD EFFECT PASSIVATION; LARGE SCALE; MINORITY CARRIER LIFETIMES; SILICON NANOWIRES;

PASSIVATION;

EID: 84936876776     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2506     Document Type: Article

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