Interface engineering for the passivation of c-Si with O 3-based atomic layer deposited AlO x for solar cell application

Applied Physics Letters

Volumn 100, Issue 14, 2012, Pages

  Lee, Hyunju ^a,d   Tachibana, Tomihisa ^a,d   Ikeno, Norihiro ^a,d   Hashiguchi, Hiroki ^a,d   Arafune, Koji ^b,d   Yoshida, Haruhiko ^b,d   Satoh, Shin Ichi ^b,d   Chikyow, Toyohiro ^c   Ogura, Atsushi ^a,d  

^a MEIJI UNIVERSITY   (Japan)

^b UNIVERSITY OF HYOGO   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM SILICATES; ATOMIC LAYER DEPOSITED; CRYSTALLINE SI; DEPOSITION TEMPERATURES; INTERFACE ENGINEERING; PASSIVATION LAYER; POST ANNEALING; ROOM TEMPERATURE; SELF-ALIGNED; SOLAR-CELL APPLICATIONS;

ALUMINOSILICATES; ALUMINUM COATINGS; ANNEALING; ATOMIC LAYER DEPOSITION; INTERFACES (MATERIALS); SILICATE MINERALS; SILICON;

PASSIVATION;

EID: 84859805388     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3701280     Document Type: Article

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