Electrode-contact enhancement in silicon nanowire-array-textured solar cells

Applied Physics Letters

Volumn 98, Issue 14, 2011, Pages

  Chen, Chen ^a   Jia, Rui ^a   Li, Haofeng ^a   Meng, Yanlong ^a   Liu, Xinyu ^a   Ye, Tianchun ^a   Kasai, Seiya ^b   Tamotsu, Hashizume ^b   Wu, Nanjian ^c   Wang, Shanli ^d   Chu, Junhao ^d  

^a INSTITUTE OF MICROELECTRONICS   (China)

^b HOKKAIDO UNIVERSITY   (Japan)

^c INSTITUTE OF SEMICONDUCTORS   (China)

^d INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT PROPERTIES; DIFFUSION PROCESS; DOPING LEVELS; DOUBLE-STEP; IN-CELL; PHYSICAL MECHANISM; SERIES RESISTANCES; SILICON NANOWIRES;

DOPING (ADDITIVES); NANOWIRES; SOLAR CELLS;

SILICON;

EID: 79954512744     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3576924     Document Type: Article

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