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Volumn 33, Issue 12, 2012, Pages 1753-1755

Dual function of antireflectance and surface passivation of atomic-layer-deposited Al2O3 films

Author keywords

Antireflectance; atomic layer deposition (ALD) deposited Al2O3 film; Si solar cells; surface passivation

Indexed keywords

ANTI-REFLECTANCE; ATOMIC LAYER DEPOSITED; CZOCHRALSKI SI; DUAL FUNCTION; FILM DEPOSITION; MINORITY CARRIER LIFETIMES; PASSIVATION PROPERTIES; SI SOLAR CELLS; SI WAFER; SOLAR-CELL APPLICATIONS; SURFACE PASSIVATION; TEXTURED SI;

EID: 84870413339     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2219491     Document Type: Article
Times cited : (15)

References (10)
  • 1
    • 77958487280 scopus 로고    scopus 로고
    • Very low surface recombination velocities on p-and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide
    • Oct.
    • F. Werner, B. Veith, V. Tiba, P. Poodt, F. Roozeboom, R. Brendel, and J. Schmidt, "Very low surface recombination velocities on p-and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide," Appl. Phys. Lett., vol. 97, no. 16, pp. 162103-1-162103-3, Oct. 2010.
    • (2010) Appl. Phys. Lett , vol.97 , Issue.16 , pp. 162103-162101
    • Werner, F.1    Veith, B.2    Tiba, V.3    Poodt, P.4    Roozeboom, F.5    Brendel, R.6    Schmidt, J.7
  • 2
    • 77949664067 scopus 로고    scopus 로고
    • Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
    • Mar.
    • N. M. Terlinden, G. Dingemans, M. C. M. Van de Sanden, and W. M. M. Kessels, "Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3," Appl. Phys. Lett., vol. 96, no. 11, pp. 112101-1-112101-3, Mar. 2010.
    • (2010) Appl. Phys. Lett , vol.96 , Issue.11 , pp. 112101-112101
    • Terlinden, N.M.1    Dingemans, G.2    Sanden De Van, M.M.C.3    Kessels, W.M.M.4
  • 3
    • 83455236144 scopus 로고    scopus 로고
    • Surface passivation of phosphorus-diffused n+type emitters by plasma-assisted atomic-layer deposited Al2O3
    • Jan.
    • B. Hoex, M. C. M. Van de Sanden, J. Schmidt, R. Brendel, and W. M. M. Kessel, "Surface passivation of phosphorus-diffused n+type emitters by plasma-assisted atomic-layer deposited Al2O3," Phys. Stat. Sol. RRL, vol. 6, no. 1, pp. 4-6, Jan. 2012.
    • (2012) Phys. Stat. Sol. RRL , vol.6 , Issue.1 , pp. 4-6
    • Hoex, B.1    Sanden De Van, M.M.C.2    Schmidt, J.3    Brendel, R.4    Kessel, W.M.M.5
  • 5
    • 84859805388 scopus 로고    scopus 로고
    • Interface engineering for the passivation of c-Si with O3-based atomic layer deposited Al2O3 for solar cell application
    • Apr.
    • H. Lee, T. Tachibana, N. Ikeno, H. Hashiguchi, K. Arafune, H. Yoshida, S.-I. Sato, T. Chikyow, and A. Ogura, "Interface engineering for the passivation of c-Si with O3-based atomic layer deposited Al2O3 for solar cell application," Appl. Phys. Lett., vol. 100, no. 14, pp. 143901-1-143901-4, Apr. 2012.
    • (2012) Appl. Phys. Lett , vol.100 , Issue.14 , pp. 143901-143901
    • Lee, H.1    Tachibana, T.2    Ikeno, N.3    Hashiguchi, H.4    Arafune, K.5    Yoshida, H.6    Sato, S.-I.7    Chikyow, T.8    Ogura, A.9
  • 6
    • 58149213837 scopus 로고    scopus 로고
    • On the c-Si surface passivation mechanism by the negativecharge- dielectric Al2O3
    • Dec
    • B. Hoex, J. J. H. Gielis, M. C. M. Van de Sanden, and W. M. M. Kessels, "On the c-Si surface passivation mechanism by the negativecharge-dielectric Al2O3," J. Appl. Phys., vol. 104, no. 11, pp. 113 703-1-113 703-7, Dec. 2008.
    • (2008) J. Appl. Phys , vol.104 , Issue.11 , pp. 113703-113701
    • Hoex, B.1    Gielis, J.J.H.2    Sanden De Van, M.M.C.3    Kessels, W.M.M.4
  • 8
    • 50849137808 scopus 로고    scopus 로고
    • Silicon surface passivation by atomic layer deposited Al2O3
    • Aug
    • B. Hoex, J. Schmidt, P. Pohl, M. C. M. Van de Sanden, and W. M. M. Kessels, "Silicon surface passivation by atomic layer deposited Al2O3," J. Appl. Phys., vol. 104, no. 4, pp. 044903-1-044903-12, Aug. 2008.
    • (2008) J. Appl. Phys , vol.104 , Issue.4 , pp. 044903-044901
    • Hoex, B.1    Schmidt, J.2    Pohl, P.3    Sanden De Van, M.M.C.4    Kessels, W.M.M.5
  • 9
    • 70350227357 scopus 로고    scopus 로고
    • Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide
    • Oct
    • P. Saint-Cast, D. Kania, M. Hofmann, J. Benick, J. Rentsch, and R. Preu, "Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide," Appl. Phys. Lett., vol. 95, no. 15, pp. 151502-1-151502-3, Oct. 2009.
    • (2009) Appl. Phys. Lett , vol.95 , Issue.15 , pp. 151502-151501
    • Saint-Cast, P.1    Kania, D.2    Hofmann, M.3    Benick, J.4    Rentsch, J.5    Preu, R.6
  • 10
    • 74849087290 scopus 로고    scopus 로고
    • Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
    • Feb
    • G. Dingemans, R. Seguin, P. Engelhart, M. C. M. van de Sanden, and W. M. M. Kessels, "Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition," Phys. Stat. Sol. RRL, vol. 4, no. 1/2, pp. 10-12, Feb. 2010.
    • (2010) Phys. Stat. Sol. RRL , vol.4 , Issue.1-2 , pp. 10-12
    • Dingemans, G.1    Seguin, R.2    Engelhart, P.3    Sanden De Van, M.M.C.4    Kessels, W.M.M.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.