-
1
-
-
77958487280
-
Very low surface recombination velocities on p-and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide
-
Oct.
-
F. Werner, B. Veith, V. Tiba, P. Poodt, F. Roozeboom, R. Brendel, and J. Schmidt, "Very low surface recombination velocities on p-and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide," Appl. Phys. Lett., vol. 97, no. 16, pp. 162103-1-162103-3, Oct. 2010.
-
(2010)
Appl. Phys. Lett
, vol.97
, Issue.16
, pp. 162103-162101
-
-
Werner, F.1
Veith, B.2
Tiba, V.3
Poodt, P.4
Roozeboom, F.5
Brendel, R.6
Schmidt, J.7
-
2
-
-
77949664067
-
Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3
-
Mar.
-
N. M. Terlinden, G. Dingemans, M. C. M. Van de Sanden, and W. M. M. Kessels, "Role of field-effect on c-Si surface passivation by ultrathin (2-20 nm) atomic layer deposited Al2O3," Appl. Phys. Lett., vol. 96, no. 11, pp. 112101-1-112101-3, Mar. 2010.
-
(2010)
Appl. Phys. Lett
, vol.96
, Issue.11
, pp. 112101-112101
-
-
Terlinden, N.M.1
Dingemans, G.2
Sanden De Van, M.M.C.3
Kessels, W.M.M.4
-
3
-
-
83455236144
-
Surface passivation of phosphorus-diffused n+type emitters by plasma-assisted atomic-layer deposited Al2O3
-
Jan.
-
B. Hoex, M. C. M. Van de Sanden, J. Schmidt, R. Brendel, and W. M. M. Kessel, "Surface passivation of phosphorus-diffused n+type emitters by plasma-assisted atomic-layer deposited Al2O3," Phys. Stat. Sol. RRL, vol. 6, no. 1, pp. 4-6, Jan. 2012.
-
(2012)
Phys. Stat. Sol. RRL
, vol.6
, Issue.1
, pp. 4-6
-
-
Hoex, B.1
Sanden De Van, M.M.C.2
Schmidt, J.3
Brendel, R.4
Kessel, W.M.M.5
-
4
-
-
84859967576
-
Approach for Al2O3 rear surface passivation of industrial p-type Si PERC above 19%
-
May
-
B. Vermang, H. Goverde, L. Tous, A. Lorenz, P. Choulat, J. Horzel, J. John, J. Poortmans, and R. Mertens, "Approach for Al2O3 rear surface passivation of industrial p-type Si PERC above 19%," Prog. Photovolt: Res. Appl., vol. 20, no. 3, pp. 269-273, May 2012.
-
(2012)
Prog. Photovolt: Res. Appl
, vol.20
, Issue.3
, pp. 269-273
-
-
Vermang, B.1
Goverde, H.2
Tous, L.3
Lorenz, A.4
Choulat, P.5
Horzel, J.6
John, J.7
Poortmans, J.8
Mertens, R.9
-
5
-
-
84859805388
-
Interface engineering for the passivation of c-Si with O3-based atomic layer deposited Al2O3 for solar cell application
-
Apr.
-
H. Lee, T. Tachibana, N. Ikeno, H. Hashiguchi, K. Arafune, H. Yoshida, S.-I. Sato, T. Chikyow, and A. Ogura, "Interface engineering for the passivation of c-Si with O3-based atomic layer deposited Al2O3 for solar cell application," Appl. Phys. Lett., vol. 100, no. 14, pp. 143901-1-143901-4, Apr. 2012.
-
(2012)
Appl. Phys. Lett
, vol.100
, Issue.14
, pp. 143901-143901
-
-
Lee, H.1
Tachibana, T.2
Ikeno, N.3
Hashiguchi, H.4
Arafune, K.5
Yoshida, H.6
Sato, S.-I.7
Chikyow, T.8
Ogura, A.9
-
6
-
-
58149213837
-
On the c-Si surface passivation mechanism by the negativecharge- dielectric Al2O3
-
Dec
-
B. Hoex, J. J. H. Gielis, M. C. M. Van de Sanden, and W. M. M. Kessels, "On the c-Si surface passivation mechanism by the negativecharge-dielectric Al2O3," J. Appl. Phys., vol. 104, no. 11, pp. 113 703-1-113 703-7, Dec. 2008.
-
(2008)
J. Appl. Phys
, vol.104
, Issue.11
, pp. 113703-113701
-
-
Hoex, B.1
Gielis, J.J.H.2
Sanden De Van, M.M.C.3
Kessels, W.M.M.4
-
7
-
-
78650089183
-
Effect of a post-deposition anneal on Al2O3/Si interface properties
-
Honolulu, HI
-
J. Benick, A. Richter, T. T. A. Li, N. E. Grant, K. R. McIntosh, Y. Ren, K. J. Weber, M. Hermle, and S. W. Glunz, "Effect of a post-deposition anneal on Al2O3/Si interface properties," in Proc. 35th IEEE Photovolt. Spec. Conf., Honolulu, HI, 2010, pp. 000891-000896.
-
(2010)
Proc. 35th IEEE Photovolt. Spec. Conf.
, pp. 000891-000896
-
-
Benick, J.1
Richter, A.2
Li, T.T.A.3
Grant, N.E.4
McIntosh, K.R.5
Ren, Y.6
Weber, K.J.7
Hermle, M.8
Glunz, S.W.9
-
8
-
-
50849137808
-
Silicon surface passivation by atomic layer deposited Al2O3
-
Aug
-
B. Hoex, J. Schmidt, P. Pohl, M. C. M. Van de Sanden, and W. M. M. Kessels, "Silicon surface passivation by atomic layer deposited Al2O3," J. Appl. Phys., vol. 104, no. 4, pp. 044903-1-044903-12, Aug. 2008.
-
(2008)
J. Appl. Phys
, vol.104
, Issue.4
, pp. 044903-044901
-
-
Hoex, B.1
Schmidt, J.2
Pohl, P.3
Sanden De Van, M.M.C.4
Kessels, W.M.M.5
-
9
-
-
70350227357
-
Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide
-
Oct
-
P. Saint-Cast, D. Kania, M. Hofmann, J. Benick, J. Rentsch, and R. Preu, "Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide," Appl. Phys. Lett., vol. 95, no. 15, pp. 151502-1-151502-3, Oct. 2009.
-
(2009)
Appl. Phys. Lett
, vol.95
, Issue.15
, pp. 151502-151501
-
-
Saint-Cast, P.1
Kania, D.2
Hofmann, M.3
Benick, J.4
Rentsch, J.5
Preu, R.6
-
10
-
-
74849087290
-
Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition
-
Feb
-
G. Dingemans, R. Seguin, P. Engelhart, M. C. M. van de Sanden, and W. M. M. Kessels, "Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition," Phys. Stat. Sol. RRL, vol. 4, no. 1/2, pp. 10-12, Feb. 2010.
-
(2010)
Phys. Stat. Sol. RRL
, vol.4
, Issue.1-2
, pp. 10-12
-
-
Dingemans, G.1
Seguin, R.2
Engelhart, P.3
Sanden De Van, M.M.C.4
Kessels, W.M.M.5
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