On the blistering of atomic layer deposited Al 2O 3 as Si surface passivation

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2011, Pages 003562-003567

  Vermang, B ^a,b   Goverde, H ^c   Lorenz, A ^b   Uruena, A ^a,b   Vereecke, G ^b   Meersschaut, J ^b   Cornagliotti, E ^a,b   Rothschild, A ^b   John, J ^b   Poortmans, J ^a,b   Mertens, R ^a,b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

^c EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AL BACK SURFACE FIELDS; ANNEALING TEMPERATURES; ATMOSPHERIC PRESSURE IONIZATION MASS SPECTROMETRIES; ATOMIC LAYER DEPOSITED; CAPACITANCE VOLTAGE MEASUREMENTS; CO-FIRING; CONTACT OPENING; CRITICAL TEMPERATURES; DESORPTION PEAKS; EFFECTIVE LIFETIME; ELASTIC RECOIL DETECTION; FIXED CHARGE DENSITY; GAS BARRIER; H-CONTENT; INTERFACE TRAP DENSITY; NEAR-SURFACE; P-TYPE SI; PASSIVATION LAYER; RAPID THERMAL PROCESSOR; REAR SURFACES; SI SUBSTRATES; SI SURFACES;

ANNEALING; ATMOSPHERIC IONIZATION; ATMOSPHERIC PRESSURE; ATOMIC LAYER DEPOSITION; DESORPTION; GAS PERMEABLE MEMBRANES; INTERFACES (MATERIALS); MASS SPECTROMETRY; PASSIVATION; PHOTOVOLTAIC EFFECTS; SILICON; SILICON NITRIDE;

ALUMINUM;

EID: 84861054449     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6185916     Document Type: Conference Paper

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