Electronic structure of epitaxial single-layer MoS2

Physical Review Letters

Volumn 114, Issue 4, 2015, Pages

  Miwa, Jill A ^a   Ulstrup, Søren ^a   Sørensen, Signe G ^a   Dendzik, Maciej ^a   Čabo, Antonija Grubišić ^a   Bianchi, Marco ^a   Lauritsen, Jeppe Vang ^a   Hofmann, Philip ^a  

^a AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BINDING ENERGY; ELECTRONIC STRUCTURE; ENERGY GAP; PHOTOELECTRON SPECTROSCOPY; POTASSIUM; TRANSITION METALS; VALENCE BANDS;

ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; BAND STRUCTURE ENGINEERING; DIRECT BAND GAP; DOPED LAYERS; EPITAXIAL SYSTEMS; POTASSIUM DOPING; SPIN ORBIT INTERACTIONS; TRANSITION METAL DICHALCOGENIDES;

GOLD;

EID: 84921931714     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.114.046802     Document Type: Article

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