Controlled van der waals heteroepitaxy of InAs nanowires on carbon honeycomb lattices

ACS Nano

Volumn 5, Issue 9, 2011, Pages 7576-7584

  Hong, Young Joon ^a   Fukui, Takashi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

grapheme; graphite; InAs; nanowire; selective area growth; van der Waals epitaxy

Indexed keywords

CARBON HONEYCOMB; CARBON SURFACE; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; EPITAXIAL FORMATION; GRAPHEME; GRAPHITIC FILMS; GRAPHITIC SUBSTRATES; HETEROGENEOUS NUCLEATION; HYBRID JUNCTION; IN-PLANE LATTICES; INAS; MONOMOLECULAR LAYER; NANOWIRE ARRAYS; NANOWIRE GROWTH; NON-WETTING; NONCOVALENT; PATTERNING TECHNIQUES; SELECTIVE AREA GROWTH; SUBSTRATE SURFACE; VAN DER WAALS; VAN DER WAALS EPITAXY; VAN DER WAALS INTERACTION;

CARBON FILMS; EPITAXIAL GROWTH; GALLIUM; GALLIUM ARSENIDE; GRAPHITE; HETEROJUNCTIONS; HONEYCOMB STRUCTURES; MONOLAYERS; NANOWIRES; SEMICONDUCTING INDIUM; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VAN DER WAALS FORCES;

INDIUM ARSENIDE;

EID: 80053330273     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn2025786     Document Type: Article

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