Metallurgical microstructure control in metal-silicon reactions

Science China Technological Sciences

Volumn 57, Issue 3, 2014, Pages 505-519

  Tu, Kingning ^a,b   Tang, Wei ^b  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

atomic layer reaction; intermetallic compound; nano gap; nucleation; Wagner diffusivity

Indexed keywords

CHEMICAL ANALYSIS; CRYSTALLIZATION; GROWTH KINETICS; INTERMETALLICS; MICROELECTRONICS; MICROSTRUCTURE; NANOWIRES; NICKEL COMPOUNDS; NUCLEATION; SILICIDES;

ATOMIC LAYER; HOMOGENEOUS NUCLEATION; INTERMETALLIC COMPOUND GROWTHS; KINETICS OF NUCLEATION; METALLURGICAL MICROSTRUCTURE; MICROELECTRONIC TECHNOLOGIES; MICROSTRUCTURE CONTROL; NANO-GAP;

SILICON WAFERS;

EID: 84896549090     PISSN: 16747321     EISSN: 18691900     Source Type: Journal    
DOI: 10.1007/s11431-014-5470-z     Document Type: Review

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