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Journal of Applied Physics

Volumn 108, Issue 5, 2010, Pages

C and Si codoping method for p -type AlN

(5) Wu, Honglei a Zheng, Ruisheng a Liu, Wen a Meng, Shu a Huang, Junyi b

a SHENZHEN UNIVERSITY (China)

b SOUTH CHINA NORMAL UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; ALN; CO-DOPING; CODOPING METHOD; DENSITY FUNCTIONALS; DIRECT BAND GAP; DOPING CONCENTRATION; GROWTH CONDITIONS; III-NITRIDE SEMICONDUCTORS; LASER DIODES; P-TYPE ALN; P-TYPE DOPING; PSEUDOPOTENTIAL CALCULATION; ULTRAVIOLET LIGHT SOURCES; WURTZITES;

ACTIVATION ENERGY; ENERGY GAP; HOLE CONCENTRATION; LIGHT EMITTING DIODES; NITRIDES; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON; ULTRAVIOLET LASERS; ULTRAVIOLET RADIATION; ZINC SULFIDE;

ALUMINUM NITRIDE;

EID: 77956808362 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3475708 Document Type: Article

Times cited : (26)

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