SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 116, Issue 4, 2014, Pages

Tunable electronic structures of p -type Mg doping in AlN nanosheet

(6) Peng, Yuting a Xia, Congxin a Zhang, Heng a Wang, Tianxing a Wei, Shuyi a Jia, Yu b

a HENAN NORMAL UNIVERSITY (China)

b ZHENGZHOU UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ELECTRONIC STRUCTURE;

DOPING CONCENTRATION; EXPERIMENTAL CONDITIONS; FIRST-PRINCIPLES CALCULATION; MG-DOPING; NUMERICAL RESULTS; P-TYPE DOPING; P-TYPE IMPURITIES; TRANSITION ENERGY LEVELS;

NANOSHEETS;

EID: 84905845382 PISSN: 00218979 EISSN: 10897550 Source Type: Journal
DOI: 10.1063/1.4891238 Document Type: Article

Times cited : (38)

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