Catalyst-seeded synthesis and field emission properties of flowerlike Si-doped AlN nanoneedle array

Applied Physics Letters

Volumn 89, Issue 25, 2006, Pages

  Tang, Y B ^a   Cong, H T ^a   Wang, Z M ^a   Cheng, H M ^a  

^a INSTITUTE OF METAL RESEARCH   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CATALYST ACTIVITY; DOPING (ADDITIVES); GROWTH (MATERIALS); SUBSTRATES; SYNTHESIS (CHEMICAL);

CATALYST-SEEDED SYNTHESIS; FIELD EMISSION (FE); NANONEEDLE ARRAYS;

NANOSTRUCTURED MATERIALS;

EID: 33845961190     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2416050     Document Type: Article

References (21)

1. M. C. Benjamin, C. Wang, R. F. Davis, and R. J. Nemanich, Appl. Phys. Lett. 64, 3288 (1994).
2. S. P. Grabowski, M. Schneider, H. Nienhaus, W. Monch, R. Dimitrov, O. Ambacher, and M. Stutzmann, Appl. Phys. Lett. 78, 2503 (2001).
3. V. N. Tondare, C. Balasubramanian, S. V. Shende, D. S. Joag, V. P. Godbole, S. V. Bhoraskar, and M. Bhadbhade, Appl. Phys. Lett. 80, 4813 (2002).
4. Q. Zhao, J. Xu, X. Y. Xu, Z. Wang, and D. Yu, Appl. Phys. Lett. 85, 5331 (2004).
5. S.-C. Shi, C.-F. Chen, S. Chattopadhyay, Z.-H. Lan, K.-H. Chen, and L.-C. Chen, Adv. Funct. Mater. 15, 781 (2005).
6. S.-C. Shi, C.-F. Chen, S. Chattopadhyay, K.-H. Chen, and L.-C. Chen, Appl. Phys. Lett. 87, 073109 (2005).
7. C. Liu, Z. Hu, Q. Wu, X. Z. Wang, Y. Chen, H. Sang, J. M. Zhu, S. Z. Deng, and N. S. Xu, J. Am. Chem. Soc. 127, 1318 (2005).
8. J. H. He, R. Yang, Y. L. Chueh, L. J. Chou, L. J. Chen, and Z. L. Wang, Adv. Mater. (Weinheim, Ger.) 18, 650 (2006).
9. S. Chattopadhyay, S.-C. Shi, Z.-H. Lan, C.-F. Chen, K.-H. Chen, and L.-C. Chen, J. Am. Chem. Soc. 127, 2820 (2005).
10. Y. B. Tang, H. T. Cong, Z. G. Zhao, and H. M. Cheng, Appl. Phys. Lett. 86, 153104 (2005).
11. L. W. Yin, Y. Bando, Y. C. Zhu, M. S. Li, Y. B. Li, and D. Golberg, Adv. Mater. (Weinheim, Ger.) 17, 110 (2005).
12. M. Kasu and N. Kobayashi, Appl. Phys. Lett. 78, 1835 (2001).
13. Y. Taniyasu, M. Kasu, and T. Makimoto, Appl. Phys. Lett. 84, 2115 (2004).
14. Y. B. Li, Y. Bando, and D. Golberg, Appl. Phys. Lett. 82, 1962 (2003).
15. B. D. Liu, Y. Bando, C. C. Tang, D. Golberg, R. G. Xie, and T. Sekiguchi, Appl. Phys. Lett. 86, 083107 (2005).
16. X. S. Fang, C. H. Ye, T. Xie, Z. Y. Wang, J. W. Zhao, and L. D. Zhang, Appl. Phys. Lett. 88, 013101 (2006).
17. Z. S. Wu, S. Z. Deng, N. S. Xu, J. Chen, J. Zhou, and J. Chen, Appl. Phys. Lett. 80, 3829 (2002).
18. N. G. Shang, C. P. Li, W. K. Wong, C. S. Lee, I. Bello, and S. T. Lee, Appl. Phys. Lett. 81, 5024 (2002).
19. J. M. Bonard, J. P. Salvetat, T. Stockli, W. A. de Heer, L. Forro, and A. Chatelain, Appl. Phys. Lett. 73, 918 (1998).
20. N. Wang and B. D. Yao, Appl. Phys. Lett. 78, 4028 (2001).
21. S. H. Jeong, H. Y. Hwang, K. H. Lee, and Y. Jeong, Appl. Phys. Lett. 78, 2052 (2001).