DFSTT-MRAM: Dual Functional STT-MRAM Cell Structure for Reliability Enhancement and 3-D MLC Functionality

IEEE Transactions on Magnetics

Volumn 50, Issue 6, 2014, Pages

  Kang, Wang ^a,c   Zhao, Weisheng ^a,b,c   Wang, Zhaohao ^a,b   Zhang, Yue ^a,b   Klein, Jaques Olivier ^a,b   Chappert, Claude ^a,b   Zhang, Youguang ^c   Ravelosona, Dafine ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b CNRS   (France)

^c BEIHANG UNIVERSITY   (China)

Author keywords

Multilevel cell (MLC); nonvolatile memory; reliability; STT MRAM

Indexed keywords

CELLS; COBALT COMPOUNDS; CYTOLOGY; DESIGN; DIGITAL STORAGE; FLASH MEMORY; FLEXIBLE ELECTRONICS; INTELLIGENT SYSTEMS; MAGNETIC ANISOTROPY; MAGNETIC DEVICES; MAGNETIC RECORDING; MAGNETIC STORAGE; MAGNETISM; MEMORY ARCHITECTURE; MONTE CARLO METHODS; NONVOLATILE STORAGE; RANDOM ACCESS STORAGE; RELIABILITY; SEMICONDUCTOR STORAGE; STOCHASTIC SYSTEMS; TUNNEL JUNCTIONS;

MAGNETIC RANDOM ACCESS MEMORY; MAGNETIC TUNNEL JUNCTION; MULTI LEVEL CELL (MLC); NON-VOLATILE MEMORY; PERPENDICULAR MAGNETIC ANISOTROPY; RELIABILITY ENHANCEMENT; RELIABILITY PERFORMANCE; STT-MRAM;

MRAM DEVICES;

EID: 84930219518     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2014.2300836     Document Type: Article

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