Progress of STT-MRAM technology and the effect on normally-off computing systems

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Yoda, H ^a   Fujita, S ^a   Shimomura, N ^a   Kitagawa, E ^a   Abe, K ^a   Nomura, K ^a   Noguchi, H ^a   Ito, J ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTING SYSTEM; DENSITY MAPS; NAND FLASH; NON-VOLATILE MEMORY; NORMALLY OFF; STT-MRAM; WORKING MEMORY;

DATA STORAGE EQUIPMENT; DYNAMIC RANDOM ACCESS STORAGE; ELECTRON DEVICES; HARD DISK STORAGE; STATIC RANDOM ACCESS STORAGE;

MRAM DEVICES;

EID: 84876117860     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479023     Document Type: Conference Paper

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