A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme

IEEE Journal of Solid-State Circuits

Volumn 38, Issue 11, 2003, Pages 1906-1910

  Jeong, Gitae ^a   Cho, Wooyoung ^a   Ahn, Sujin ^a   Jeong, Hongsik ^a   Koh, Gwanhyeob ^a   Hwang, Youngnam ^a   Kim, Kinam ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

0.24 m technology; MRAM; Self reference sensing scheme

Indexed keywords

ANTIFERROMAGNETIC MATERIALS; CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENT CONTROL; ELECTRIC POTENTIAL; MAGNETIC STORAGE; MAGNETORESISTANCE; NONVOLATILE STORAGE; TUNNEL JUNCTIONS;

MAGNETIC TUNNEL JUNCTION; NONVOLATILE MAGNETORESITANCE RANDOM ACCESS MEMORY; SELF-REFERENCE SENSING SCHEME;

RANDOM ACCESS STORAGE;

EID: 0242551723     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2003.818145     Document Type: Article

References (5)

1. P. K. Naji et al., "A 256-kb 3.0 V 1T1MTJ nonvolatile magneto-resistive RAM," in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2001, pp. 122-123.
2. R. Scheuerlein et al., "A 10-ns read and write nonvolatile memory array using a magnetic tunnel junction and FET switch in each cell," in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2000, 128-129.
3. M. Durlam et al., "Nonvolatile RAM based on magnetic tunnel junction elements," in IEEE Int. Solid-State Circuits Conf. Dig. Tech. Papers, Feb. 2000, pp. 130-131.
4. S. Tehrani et al., "Recent developments in magnetic tunnel junction MRAM," IEEE Trans. Magn., vol. 36, pp. 2752-2757, Sept. 2000.
5. J. Das, et al., "Area scaling and voltage dependence of time-to-break-down in magnetic tunnel junctions," J. Appl. Phys., vol. 91, pp. 7712-7714, May 2002.