Four-valued magnetic random access memory based on magneto tunnel junction and resonant tunneling diode

Journal of Multiple-Valued Logic and Soft Computing

Volumn 11, Issue 5-6, 2005, Pages 467-479

  Uemura, Tetsuya ^a   Yamamoto, Masafumi ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

Double barrier MTJ; Multivalued MRAM; NDR characteristics; Resonant tunnel diode

Indexed keywords

ANTIFERROMAGNETISM; COMPUTER SIMULATION; DATA STORAGE EQUIPMENT; DIODES; ELECTRIC RESISTANCE; ELECTRONS; FERMI LEVEL; FERROMAGNETISM; MAGNETIZATION; POWER SUPPLY CIRCUITS; RESONANT TUNNELING; SCHEMATIC DIAGRAMS; TRANSISTORS; TUNNEL DIODES; TUNNEL JUNCTIONS;

BOLTZMANN CONSTANTS; MAGNETIC RANDOM ACCESS MEMORY (MRAM); MAGNETO TUNNEL JUNCTION (MTJ); MAGNETO-RESISTANCE (MR) RATIO; NEGATIVE DIFFERENTIAL RESISTANCE (NDR) CHARACTERISTICS;

RANDOM ACCESS STORAGE;

EID: 23144455903     PISSN: 15423980     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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