Multilevel 3 bit-per-cell magnetic random access memory concepts and their associated control circuit architectures

IEEE Transactions on Nanotechnology

Volumn 11, Issue 1, 2012, Pages 63-70

  Cramman, Helen ^a   Eastwood, David S ^b   King, Jennifer A ^a   Atkinson, Del ^a  

^a DURHAM UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

2 D and 3 D MRAM; Binary octal conversion; control architecture; magnetic tunnel junction (MTJ) stacking; multibit memory

Indexed keywords

2-D-AND 3-D-MRAM; BINARY BITS; CONTROL ARCHITECTURE; CONTROL CIRCUITS; CURRENT-DRIVEN; ELECTRICAL RESISTANCES; MAGNETIC RANDOM ACCESS MEMORIES; MAGNETIC TUNNEL JUNCTION (MTJ) STACKING; MEMORY CELL; MULTI-BITS; MULTIBIT MEMORY; RESISTANCE LEVEL;

CELLS; ELECTRIC NETWORK ANALYSIS; MAGNETIC DEVICES; MAGNETIC FIELDS; MEMORY ARCHITECTURE; MRAM DEVICES; RANDOM ACCESS STORAGE; THREE DIMENSIONAL; TUNNEL JUNCTIONS;

MAGNETIC STORAGE;

EID: 84855708239     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2011.2149538     Document Type: Article

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