Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures

Nano Letters

Volumn 15, Issue 3, 2015, Pages 1925-1929

  Yankowitz, Matthew ^a   Larentis, Stefano ^b   Kim, Kyounghwan ^b   Xue, Jiamin ^b   McKenzie, Devin ^a   Huang, Shengqiang ^a   Paggen, Marina ^a,c   Ali, Mazhar N ^d   Cava, Robert J ^d   Tutuc, Emanuel ^b   LeRoy, Brian J ^a  

^a The University of Arizona   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c UNIVERSITY OF TEXAS AT EL PASO   (United States)

^d PRINCETON UNIVERSITY   (United States)

Author keywords

defects; graphene; Scanning tunneling microscopy spectroscopy; scattering; transition metal dichalchogenides

Indexed keywords

DEFECTS; ELECTRONIC PROPERTIES; SCANNING TUNNELING MICROSCOPY; SCATTERING; TRANSITION METALS; VAN DER WAALS FORCES;

ALTERNATIVE SUBSTRATES; CRYSTALLINE DEFECTS; HEXAGONAL BORON NITRIDE (H-BN); SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY/SPECTROSCOPY; SEMICONDUCTING TRANSITION; STRUCTURAL AND ELECTRONIC PROPERTIES; TRANSITION METAL DICHALCOGENIDES;

GRAPHENE;

GRAPHITE; METAL NANOPARTICLE; TRANSITION ELEMENT;

CHEMISTRY; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; MATERIALS TESTING; PARTICLE SIZE; ULTRASTRUCTURE;

ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; GRAPHITE; MATERIALS TESTING; METAL NANOPARTICLES; PARTICLE SIZE; TRANSITION ELEMENTS;

EID: 84924597010     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl5047736     Document Type: Article

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