Nb-doped single crystalline MoS2 field effect transistor

Applied Physics Letters

Volumn 106, Issue 17, 2015, Pages

  Das, Saptarshi ^a   Demarteau, Marcellinus ^a   Roelofs, Andreas ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; LAYERED SEMICONDUCTORS; MOLYBDENUM COMPOUNDS; NIOBIUM COMPOUNDS; SEMICONDUCTOR DOPING;

AMBIPOLAR CONDUCTION; DOPING CONCENTRATION; ELECTROSTATIC EFFECT; FULLY DEPLETED; HEAVY DOPING; ON-OFF RATIO; SINGLE-CRYSTALLINE; TRANSISTOR GEOMETRIES;

FIELD EFFECT TRANSISTORS;

EID: 84929084945     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4919565     Document Type: Article

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