Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Applied Physics Letters

Volumn 106, Issue 15, 2015, Pages

  Wang, Junjie ^a   Rhodes, Daniel ^b   Feng, Simin ^a   Nguyen, Minh An T ^a   Watanabe, K ^c   Taniguchi, T ^c   Mallouk, Thomas E ^a   Terrones, Mauricio ^a   Balicas, Luis ^b   Zhu, J ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b FLORIDA STATE UNIVERSITY   (United States)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; GATES (TRANSISTOR); SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; TRANSISTORS; TRANSITION METALS;

CONTACT TECHNOLOGIES; DENSITY OF STATE; ELECTRICAL DEVICES; FIELD-EFFECT DEVICES; MEASUREMENTS AND MODELING; SCHOTTKY BARRIER TRANSISTORS; THERMIONIC FIELD EMISSION; TRANSITION METAL DICHALCOGENIDES;

FIELD EFFECT TRANSISTORS;

EID: 84928492428     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4918282     Document Type: Article

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51. 2 channel resistance.